New technologies in dual channel read-out registers for high-density CCD image sensor

EIJI ODA, KOZO ORIHARA, TAKANORI TANAKA, TAKA0 KAMATA, A N D YASUO ISHIHARA Ahstruct-A I /2-in format 768 ( H ) X 492 ( V ) pixel interline CCD image sensor has heen developed. Unit cell dimensions are as small as 8 . 4 ( H ) X 9 . 8 ( V ) pni. In order to realize such a high-density device, novel technologies have been developed, i.e., 1) dual-channel horizontal CCI) registers, 2) single p-well vertical overflow drain, 3) high-capacitance p-well structure, and 4) inverted-LOCOS channel isolation process. A horizontal resolution of more than 500 TV lines has heen obtained. Maximuni signal charge for the vertical CCD register is as much as 1.5 X 10' electrons, corresponding to 270-nA output current, in spite of the 1.8-pm mask width narrnw-channel vertical CCI) register. The total random noise is less than 20 electrons after correlated douhle sampling. Then, the dynamic range reaches 77 dB. The photosensitivity is 0.092 pA/pN'. Experimental results also show that the technologies used here are effective for realizing a future-use high-definition CCD image sensor.

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A 1-inch 2-M pixel HDTV CCD image sensor with tungsten photo-shield and H-CCD shunt wiring

Morimoto

Orihara

Mutoh

et al. 1995

IEEE Trans. Electron Devices

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New technologies in dual channel read-out registers for high-density CCD image sensor

Abstract: New technologies has been developed for dual channel read-out registers.

Cited by 9 publications

References 7 publications

A 2-million-pixel CCD image sensor overlaid with an amorphous silicon photoconversion layer

A 2-million-pixel CCD image sensor overlaid with an amorphous silicon photoconversion layer

1/2-in 768(H)*492(V) pixel CCD image sensor

A 1-inch 2-M pixel HDTV CCD image sensor with tungsten photo-shield and H-CCD shunt wiring

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