New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

Barlini, Davide; Ciappa, Mauro; Castellazzi, Alberto; Mermet-Guyennet, Michel; Fichtner, W.

doi:10.1016/j.microrel.2006.07.058

Cited by 81 publications

(34 citation statements)

References 1 publication

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“…A number of studies have been published on the use of TSEPs for Silicon (Si) MOSFETs and IGBTs power devices, including the monitoring of dI/dt during turn-on or dV/dt during turn-off transients [14]- [16], Miller capacitance discharge time [17], threshold voltage [18]- [20], on-state voltage drop [21]- [23], voltage across source/emitter parasitic inductance [24], internal gate resistance [25]- [26], gate drive turn-on transients [27].…”

Section: Index Terms-power Semiconductor Devices Condition Monitorinmentioning

confidence: 99%

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Griffo

Wang

Colombage³

et al. 2018

IEEE Trans. Ind. Electron.

117

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interests range from motion control and electromechanical energy conversion to electric drives for applications in automotive, renewable energy, household appliances and aerospace sectors. He is a fellow of the IET and a senior member of IEEE.Kalhana Colombage received the M.Eng. degree in electronic engineering with employment experience from the University of Sheffield, Sheffield, U.K., in 2010, where he received the Ph.D. degree for his thesis "Design and control of on-board bidirectional battery chargers with islanding detection for electric vehicle applications" in 2015.

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Section: Index Terms-power Semiconductor Devices Condition Monitorinmentioning

confidence: 99%

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Griffo

Wang

Colombage³

et al. 2018

IEEE Trans. Ind. Electron.

117

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“…However, the method requires an increased measurement and calibration effort and can be considered to be very noise sensitive. The feasibility of other temperature sensitive parameters for online junction temperature measurement, such as switching times [24], the current slope [25], or the width of the miller plateau [26], is rather low. Reasons for this are their small temperature sensitivity in the range of about 1 ns/K, their poor selectivity, the limited resolution of affordable sensors, and the need to add subsequent compensating procedures.…”

Section: Igbt Driver With Measurementmentioning

confidence: 99%

Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car

Denk

Bakran

2015

Advances in Power Electronics

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The accuracy of the lifetime calculation approach of IGBT power modules used in hybrid-electric powertrains suffers greatly from the inaccurate knowledge of application typical load-profiles. To verify the theoretical load-profiles with data from the field this paper presents a concept to record all junction temperature cycles of an IGBT power module during its operation in a test vehicle. For this purpose the IGBT junction temperature is measured with a modified gate driver that determines the temperature sensitive IGBT internal gate resistor by superimposing the negative gate voltage with a high-frequency identification signal. An integrated control unit manages the measurement during the regular switching operation, the exchange of data with the system controller, and the automatic calibration of the sensor system. To calculate and store temperature cycles on a microcontroller an online Rainflow counting algorithm was developed. The special feature of this algorithm is a very accurate extraction of lifetime relevant information with a significantly reduced calculation and storage effort. Until now the recording concept could be realized and tested within a laboratory voltage source inverter. Currently the IGBT driver with integrated junction temperature measurement and the online cycle recording algorithm is integrated in the voltage source inverter of first test vehicles. Such research will provide representative load-profiles to verify and optimize the theoretical load-profiles used in today's lifetime calculation.

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“…Possible ways of monitoring the junction temperature without direct measurement are the measurement of the , the short circuit current or model based approaches [28], [29], [30]. For more detailed stress monitoring, additional sensors for humidity and vibration could be beneficial [14], [31].…”

Section: Fig 3: Lifetime Extension Achieved By System Designmentioning

confidence: 99%

Review of active thermal and lifetime control techniques for power electronic modules

Andresen

Liserre

Buticchi

2014

2014 16th European Conference on Power Electronics and Applications

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New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

Cited by 81 publications

References 1 publication

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car

Review of active thermal and lifetime control techniques for power electronic modules

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