Abstract:A new structure for SAR target recognition using multi-aspect SAR images is proposed. The new structure applies new approaches in the two levels of SAR image target recognition, which are data level and decision level, and combines the benefits of the two. Projections onto convex sets (POCS) super-resolution reconstruction algorithm is used in the data level of the new structure, which is to advance the resolution of the SAR image by using a series of multi-aspect SAR images. Weighted Bayes decision fusion alg… Show more
“…According to thermionic emission theory, the Schottky diode's current-voltage characteristics are already expressed in the literature [10][11][12][13][14]. One can find the I-V graph for different metal types in [10][11][12][13][14]. In the case of forward bias current for nonideal conditions, the equation is expressed as follows:…”
This work was prepared in two sections; the first section describes how to alloy Schottky diodes and aims to understand how metal alloys affect the essential parameters of Schottky diodes at the metal-semiconductor interface. The second section covers the varying differential depletion length in (Cu% Ni%)/n-Si/Al binary-alloyed Schottky diodes. After collecting data, the characteristics of Schottky diodes are calculated by plotting them with an increasing percentage ratio of the first element. We see that alloyed Schottky diode characteristics significantly depend on the mass percentage ratio of the first element. Significant results are seen: first, V bi (built-in potential) directly affects the characteristics of Schottky diodes with a turning point occurring at the V bi point on the axis, and second, the built-in potential plays a key role in Schottky diode characteristics. Estimation of the depletion length depends on the built-in potential. For the forward and reverse bias cases, the depletion length versus voltage graphs are identical, but with their symmetry mirrored. Analyzing the differential depletion lengths, it is easily seen that they have higher or lower values compared to the zero depletion length for the forward and reverse bias cases, respectively. When the depletion length formula is expanded in a series, new equations are obtained to show significant effects on Schottky diode characteristics.
“…According to thermionic emission theory, the Schottky diode's current-voltage characteristics are already expressed in the literature [10][11][12][13][14]. One can find the I-V graph for different metal types in [10][11][12][13][14]. In the case of forward bias current for nonideal conditions, the equation is expressed as follows:…”
This work was prepared in two sections; the first section describes how to alloy Schottky diodes and aims to understand how metal alloys affect the essential parameters of Schottky diodes at the metal-semiconductor interface. The second section covers the varying differential depletion length in (Cu% Ni%)/n-Si/Al binary-alloyed Schottky diodes. After collecting data, the characteristics of Schottky diodes are calculated by plotting them with an increasing percentage ratio of the first element. We see that alloyed Schottky diode characteristics significantly depend on the mass percentage ratio of the first element. Significant results are seen: first, V bi (built-in potential) directly affects the characteristics of Schottky diodes with a turning point occurring at the V bi point on the axis, and second, the built-in potential plays a key role in Schottky diode characteristics. Estimation of the depletion length depends on the built-in potential. For the forward and reverse bias cases, the depletion length versus voltage graphs are identical, but with their symmetry mirrored. Analyzing the differential depletion lengths, it is easily seen that they have higher or lower values compared to the zero depletion length for the forward and reverse bias cases, respectively. When the depletion length formula is expanded in a series, new equations are obtained to show significant effects on Schottky diode characteristics.
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