New simulation method for Deep Trench Termination diode (DT&lt;sup&gt;2&lt;/sup&gt;) using mixed-mode TCAD sentaurus

Baccar, F.; Arbess, Houssam; Théolier, Loïc; Azzopardi, Stéphane; Woirgard, Eric

doi:10.1109/eurosime.2015.7103122

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2019

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“…Moreover, the contacts between RFP and the electrodes should be noticed [33]. There usually is a difference between the simulation and the realistic situation in the metallization effect [34]. If the practical metallization is not performed well, an immensely increased contact resistance will reduce I RFP and impair the benefits brought by RFP.…”

Section: Simulation and Optimizationmentioning

confidence: 99%

A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate

Cheng

Chen

et al. 2019

IEEE J. Electron Devices Soc.

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An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance. The realization of RFP barely complicates the device fabrication, but it motivates QVSJ to significantly improve the relationship between breakdown voltage (BV) and specific on-state resistance (R ON,SP). The simulation results show that compared with the conventional QVSJ T-LDMOS, the proposed one gains the R ON,SP reduced by about 79% under the same BV requirement of about 500 V. It therefore presents an excellent figure of merit (FOM) (FOM = BV 2 /R ON,SP , Baliga's FOM) up to 29.8 MW/cm 2 , which is superior to the prior art and exhibits a bright prospect of saving energy. INDEX TERMS Trench LDMOS (T-LDMOS), quasi vertical super junction (QVSJ), resistive field plate (RFP).

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Section: Simulation and Optimizationmentioning

confidence: 99%