2008
DOI: 10.1007/978-1-4020-6463-0_8
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New Regimes of Excitation and Mid-IR Lasing of Transition Metal Doped II–VI Crystals

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Cited by 3 publications
(6 citation statements)
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“…However, there are experimental results demonstrating feasibility of the Cr:ZnSe lasing under electrical excitation via injected carrier recombination [41,90] as well as similar carrier processes (via photo-ionization transitions) induced by visible optical excitation [41,90]. Furthermore, as described in the next paragraph, the efficiency of energy transfer from the host to the lasing impurity is expected to increase in TM doped II-VI quantum confined structures.…”
Section: Excitation Via Recombination Processesmentioning
confidence: 96%
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“…However, there are experimental results demonstrating feasibility of the Cr:ZnSe lasing under electrical excitation via injected carrier recombination [41,90] as well as similar carrier processes (via photo-ionization transitions) induced by visible optical excitation [41,90]. Furthermore, as described in the next paragraph, the efficiency of energy transfer from the host to the lasing impurity is expected to increase in TM doped II-VI quantum confined structures.…”
Section: Excitation Via Recombination Processesmentioning
confidence: 96%
“…Possibility of electrical pumping of mid-IR semiconductor lasers based on TM doped II-VI structures was investigated in several publications [34,41,[88][89][90]. This new type of laser could possess some advantages in comparison with other mid-IR laser sources such as quantum cascade lasers; semiconductor diodes (InAsSbP/InAsSb/InAs), and systems based on nonlinear frequency conversions (optical parametric oscillation and difference frequency generation).…”
Section: Electrical Excitation Of the Transition Metals In Semiconducmentioning
confidence: 99%
“…Indeed, optically pumped RT lasers based on Cr:ZnS, Cr:ZnSe, Cr:Cd 1-x Mn x Te, Cr:CdSe, and Fe:ZnSe crystals providing access to the 2-3 and 3.8-5 µm spectral regions with high (up to 70%) efficiency, multi-Watt-level output powers, tunability in excess of 1000 nm, and narrow spectral linewidth (<20 MHz), have been reported by several groups (see e.g. reviews [2,3,4,5,6] and references therein). Arguably these lasers represent nowadays the simplest and the most cost-effective route for high power, broadly tunable lasing in the 2-3 and 3.8-5 µm wavelength ranges.…”
Section: Discussionmentioning
confidence: 90%
“…The most reliable and controllable results for deposition of the metal film were obtained with the use of magnetron sputtering (see Figure.1). 6 Approved for public release: distribution unlimited.…”
Section: Discussionmentioning
confidence: 99%
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