New process of silicon carbide purification intended for silicon passivation

Barbouche, M.; Zaghouani, R. Benabderrahmane; Benammar, N.E.; Aglieri, Vincenzo; Mosca, Mauro; Macaluso, Robert; Khirouni, K.; Ezzaouia, Hatem

doi:10.1016/j.spmi.2016.11.064

Cited by 11 publications

(3 citation statements)

References 38 publications

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“…Silicon carbide (SiC) has attracted an increasing attention, over the last years, due to its wide bandgap, large breakdown electric field, high electron mobility, excellent thermal conductivity, high transparency, good chemical stability and high melting point [1]. This unique combination of properties makes SiC a suitable semiconductor material for a broad range of applications such as power devices [2], sensors [3], solar cells [4,5], light emitting diodes [6] and carbon fiber coating [7]. On the other hand, zinc oxide (ZnO), with n-type behaviour and a direct wide bandgap of ~3.3 eV [8,9] is an excellent transparent and conductive oxide (TCO) when doped with Al [10], which leads to the formation of AZO (Al-doped ZnO).…”

Section: Introductionmentioning

confidence: 99%

Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition

Boughelout¹,

Macaluso²,

Crupi³

et al. 2020

Semicond. Sci. Technol.

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The structural and photoelectrical properties of Al-doped ZnO (AZO)/SiC/p-Si and AZO/SiC/n-Si heterojunctions, fabricated at low temperature by pulsed laser deposition, were investigated by means of a number of techniques. Raman analysis indicates that SiC layers have the cubic 3C-SiC phase, whilst X-ray diffraction measurements show that AZO films exhibit a hexagonal wurtzite structure, highly textured along the c-axis, with average crystallites size of 35.1 nm and lattice parameter c of 0.518 nm. The homogeneous and dense surface morphology observed by scanning electron microscopy was confirmed by atomic force microscopy images. Moreover, UV–Vis-NIR spectra indicated a high transmittance of SiC films in the region 550–2500 nm, about 80% transmittance of AZO films in the 450–1000 nm region, and optical band gaps in good agreement with literature. These results prove that pulsed laser deposition is a low-cost technique suitable to grow SiC and AZO films with excellent material properties. The effect of the Si doping on the current transport mechanisms in the heterojunctions was investigated by current-voltage measurements under dark and white light illumination. Both heterojunctions exhibit a diode behaviour and relatively low leakage current, with a noticeable superiority for the AZO/SiC/n-Si device also under illumination, with an illumination/dark ratio of about 400. Our results indicate that the AZO/SiC/p-Si heterojunctions, with higher values of ideality factor, series resistance and lower rectifying ratio, have a complex current transport compared to the diodes grown on n-type Si. Additionally, capacitance-voltage measurements and Mott-Schottky plot allowed to determine a built-in potential of 0.51 V for the Al/AZO/SiC/p-Si/Al device.

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Section: Introductionmentioning

confidence: 99%

Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition

Boughelout¹,

Macaluso²,

Crupi³

et al. 2020

Semicond. Sci. Technol.

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“…Indeed, Salman et al had shown an enhancement of solar cells efficiency with ZnO/PS as antireflection layer [17]. Other materials have recently proved their effectiveness to passivate silicon and improve solar cells efficiency such as silicon carbide [18] and alumina [19].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles

et al. 2018

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In this work, we report on the passivation of porous silicon (PS) by tungsten trioxide (WO 3 ) nanostructured thin films deposited via dip-coating of PS in tungsten hexachloride and water/ethanol solution. Structural analysis by Fourier transform infrared spectroscopy showed a partial disappearance of SiH x and Si-O-Si peaks after WO 3 thin film deposition on the PS due to the replacement of H atoms by WO 3 . Additionally, PS/WO 3 sample revealed weakly intense peaks which can be ascribed to O-W-O and W=O bridging bonds. Morphological analysis by atomic force spectroscopy showed the coverage of the PS surface by a nanostructured thin film of dense WO 3 nanoparticles with a size ranging from 40 to 60 nm. The photoluminescence signal intensity of PS/WO 3 samples presents a continuous increase as a function of the immersion time in the precursor solution. This is attributed to a better decoration of the PS surface by WO 3 nanoplatelets and a decrease of surface recombination velocity (200 x 10 2 cm/s for untreated silicon, 137 x 10 2 cm/s for PS and 99 x 10 2 cm/s for PS/WO 3 samples). Hence, a ~ 50 % improvement in the effective lifetime of minority carriers is obtained.Moreover, the deposited WO 3 contributed not only to the passivation of PS, but acted as an antireflection layer which enhanced the optical properties of PS by reducing the reflection of light. These obtained results confirmed the benefits of using WO 3 thin film as passivation/antireflection coating for possible solar cell application.

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“…These defects have one active electron in the atomic D-shell and are invariant under the transformations of the C 3v point group imposed by the crystal structure surrounding the defect. While the interaction with the nuclear spins of neighboring C and Si isotopes with non-zero nuclear spins is possible, the presence of such non-zero spin isotopes as a nearest neighbour is fairly improbable, because their natural abundances are about 1% for 13 C (spin 1/2) and 5% for 29 Si (spin 1/2) [26] and the abundance can be further reduced by using isotopically purified SiC [27,28]. Here, we therefore concentrate on the interaction with the TM nuclear spin.…”

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confidence: 99%

Hyperfine Structure of Transition Metal Defects in SiC

Tissot,

Burkard

2021

Preprint

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Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a theory for the interaction of an active electron in the D-shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based on our theory we discuss the possibility to exchange the nuclear and electron states with potential applications for nuclear spin manipulation and long-lived nunclear-spin based quantum memories.

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New process of silicon carbide purification intended for silicon passivation

Cited by 11 publications

References 38 publications

Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition

Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition

Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles

Hyperfine Structure of Transition Metal Defects in SiC

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