2005
DOI: 10.1088/0022-3727/38/13/002
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New physics and devices based on self-assembled semiconductor quantum dots

Abstract: Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states and high radiative efficiencies. This makes them highly suitable both for fundamental physics studies of zero-dimensionality, atomic-like semiconductor systems and applications in a range of novel electro-optical devices. This review discusses recent important advances in the study and application of semiconductor QDs. Using a wide range of optical spectroscopy techniques, it is possible to obtain a detailed understanding… Show more

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Cited by 142 publications
(85 citation statements)
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References 150 publications
(172 reference statements)
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“…Applications range from light emitting devices to photovoltaic cells and bio-sensors. The intense interest is motivated not only by the important technological promise but by the appeal of dealing with the experimentally accessible model system that is governed by tunable cooperative effects of disorder, electron correlations, and quantum phenomena (Gaponenko, 1998;Mowbray and Skolnick, 2005;Murray et al, 1993).…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Applications range from light emitting devices to photovoltaic cells and bio-sensors. The intense interest is motivated not only by the important technological promise but by the appeal of dealing with the experimentally accessible model system that is governed by tunable cooperative effects of disorder, electron correlations, and quantum phenomena (Gaponenko, 1998;Mowbray and Skolnick, 2005;Murray et al, 1993).…”
Section: Introductionmentioning
confidence: 99%
“…For the prototype system of InAs on GaAs, where the lattice mismatch is 7%, InAs initially deposited on GaAs grows as a strained two-dimensional layer (referred to as the wetting layer) (Mowbray and Skolnick, 2005). These materials along with In 2 O 3 : Sn (known as indium tin oxide, ITO) are the most widely studied systems.…”
Section: Introductionmentioning
confidence: 99%
“…InAs/GaAs quantum dots (QD) have received much attention for their potential use in next-generation telecoms light sources [1]. QD-based lasers were predicted to have low, temperature-insensitive threshold currents [2,3] but this requires large energy separations between the discrete QD states to suppress thermal effects.…”
Section: Introductionmentioning
confidence: 99%
“…Nowadays, self-assembled InAs quantum dots grown on GaAs substrates are intensively studied due to their potential applications: quantum dot ensembles are employed in laser active regions and mid-infrared detectors, single quantum dots have a potential for application in memories, two-level information processing or single photon sources (Henini& Bugajski, 2005;Mowbray& Skolnick, 2005;Battacharya, 2007).…”
Section: Introductionmentioning
confidence: 99%