New photodiodes based graphene-organic semiconductor hybrid materials

Mekki, A.; Ocaya, R.O.; Dere, A.; Al-Ghamdi, Ahmed A.; Harrabi, K.; Yakuphanoğlu, F.

doi:10.1016/j.synthmet.2015.12.026

Cited by 48 publications

(10 citation statements)

References 28 publications

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“…The I-V characteristic of Schottky diode can be described by thermionic emission and the R s should be included due to the resistance of semiconductor, metal and contact with the relation [49]…”

Section: Current-voltage Behaviour Of Schottky Diodesmentioning

confidence: 99%

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Aydın

Bacaksız

Yağmurcukardeş

et al. 2018

Applied Surface Science

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We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4 bis(diphenylamino)-1, 1 :3terphenyl-5 carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1 :3 1 -terphenyl-5 carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as -interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

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Section: Current-voltage Behaviour Of Schottky Diodesmentioning

confidence: 99%

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Aydın

Bacaksız

Yağmurcukardeş

et al. 2018

Applied Surface Science

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“…Devre elemanındaki GO konsantrasyonları değiştirilerek yüksek duyarlılıkta yeni tip diyotlar üretilmiştir. Coumarin organik yarı iletkeni, düşük levha direnci ve yüksek optik geçirgenliğinden ötürü devre elemanının daha hassas bir yapı kazanmasını sağlamıştır [40].…”

Section: çEşitli Fotodiyotlarla İlgili Yapılan Literatür Araştırmasıunclassified

Analysis of The Electrical Characteristics of Photodiodes Produced by Dopping Various Metal Oxides

Aslan

Esen

Yakuphanoğlu

2020

International Journal of Innovative Engineering Applications

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Review paperIn this study, the studies made in the last 10 years about the devices produced by using different metal oxide nano powders were discussed extensively. The effects of the dopping on the electrical properties of photodiodes and photodetectors were investigated. The I-V characteristics of the devices performed under different light intensities were analyzed. In addition, the comparison of electronic parameters such as ideality factor (n), barrier height (Фb), series resistance (Rs) and interface state density (Dit) of the thin films produced was investigated. The effect of these parameters on devices is emphasized. In addition, it was investigated to what extent the optoelectronic properties of devices are compatible with the current literature.

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“…However, the obtained Au/CuCo 2 S 4 /p-Si device can be employed by improving its photodiode property with homogeneous interfacial layers. 20,21 Diode parameters (barrier height (U b ), ideality factor (n) and series resistance ðR s Þ) are determined to understand the device property better. There are three most popular techniques to calculate diode parameters.…”

Section: Cuco 2 S 4 May Cause a Barrier Between The Al And P-mentioning

confidence: 99%

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

Yıldırım

Koçyiğit

Sarılmaz

et al. 2019

Journal of Elec Materi

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Ternary-structured thiospinels have attracted great attention in recent years for energy applications due to their attractive characteristics such as simple production, earth-abundant components and non-toxic nature. In this work, copper cobalt sulfide (CuCo 2 S 4 or carrollite) thiospinel nanocrystals were synthesized by a hot-injection method, and detailed electrical and optoelectronic characterizations were performed in a Schottky device. The synthesized nanocrystals were used as an interfacial layer between the Au metal and p-Si semiconductor to obtain an Au/CuCo 2 S 4 /p-Si device. The structural and morphological characterizations confirmed the crystallinity, nanostructure and composition of the CuCo 2 S 4 nanocrystals. The I-V and C-V measurements were employed to characterize the Au/CuCo 2 S 4 /p-Si device for various illumination intensities. The obtained device exhibited good rectifying and photodiode properties as well as good photocapacitance. The Au/CuCo 2 S 4 /p-Si device can be used and improved for optoelectronic applications.

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New photodiodes based graphene-organic semiconductor hybrid materials

Cited by 48 publications

References 28 publications

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Analysis of The Electrical Characteristics of Photodiodes Produced by Dopping Various Metal Oxides

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

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