New Partition Factor Calculations for Evaluating the Damage of Low Energy Ions in Silicon

Akkerman, A.; Barak, J.

doi:10.1109/tns.2006.884382

Cited by 34 publications

(19 citation statements)

References 37 publications

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“…The Monte Carlo code we have used had been described in [9]. Here, we briefly mention the main input parts of the calculation algorithm.…”

Section: Brief Description Of the Codementioning

confidence: 99%

“…The same applies to electron NIEL. To see the difference due to the new partition function, we have used in [9] the above expressions for f n to recalculate NIEL for protons and electrons. We have shown that the new NIEL for protons below 8 MeV and electrons up to 50 MeV is about 15% higher compared to those using formula (3) in our article [4] and even a larger difference when using the TRIM results for f n .…”

Section: B Ions In Siliconmentioning

confidence: 99%

“…In [9] we presented this expression and compared its results with previously published values of f n . The new expression was then used for calculating the NIEL values of electrons and protons.…”

Section: Introductionmentioning

confidence: 99%

“…These new values are larger by 15% on the average compared to previously calculated NIEL data. It was also shown in [9] that, for low energy ions, the inelastic losses are overestimated by the SRIM-03 tabulation [10].…”

Section: Introductionmentioning

confidence: 99%

“…The results of calculations for f e (or f n ) yield a convenient analytical form to be useful in practice. The new expression for f n , presented in [9], is extended here to heavier ions, up to Krypton. It is then extensively compared with existing experimental results showing a good agreement with them.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Partitioning to elastic and inelastic processes of the energy deposited by low energy ions in silicon detectors

Akkerman¹,

Barak²

2007

Nuclear Instruments and Methods in Physics Research Section B:

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“…The Monte Carlo code we have used had been described in [9]. Here, we briefly mention the main input parts of the calculation algorithm.…”

Section: Brief Description Of the Codementioning

confidence: 99%

Section: B Ions In Siliconmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Partitioning to elastic and inelastic processes of the energy deposited by low energy ions in silicon detectors

Akkerman¹,

Barak²

2007

Nuclear Instruments and Methods in Physics Research Section B:

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Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement

Salzberger

Nomayr

Lugli

et al. 2017

Progress in Photovoltaics

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Characteristic degradation curves for proton and electron induced degradation of triple junction (3J) and isotype Ga0.5In0.5P/GaAs/Ge solar cells were obtained. The displacement damage dose methodology in combination with a varying effective threshold energy for atomic displacement Td,eff was used to analyze 3G28 and 3G30 3J cell data. The nonionizing energy loss (NIEL) was calculated analytically, and Td,eff was explicitly introduced as a fit parameter. Using the GaAs NIEL in fitting the 3J degradation data, a Td,eff of 21 eV was determined, whereas a Td,eff of 36 eV was found using the Ga0.5In0.5P NIEL. In GaAs and Ga0.5In0.5P single junction cells, the effective threshold energies for atomic displacement of 22 and 34 eV were determined. Copyright © 2017 John Wiley & Sons, Ltd.

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Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter

Lazanu

Ciurea

Lazanu

2013

Astroparticle Physics

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The cryogenic detectors in the form of bolometers are presently used for different applications, in particular for very rare or hypothetical events associated with new forms of matter, specifically related to searches for Dark Matter. In the detection of particles with a semiconductor as target and detector, usually two signals are measured: ionization and heat. The amplification of the thermal signal is obtained with the prescriptions from the Luke-Neganov effect. The energy deposited in the semiconductor lattice as stable defects in the form of Frenkel pairs at cryogenic temperatures, following the interaction of a dark matter particle, is evaluated and consequences for measured quantities are discussed. This contribution is included in the energy balance of the Luke effect. Applying the present model to germanium and silicon, we found that for the same incident weakly interacting massive particle the energy deposited in defects in germanium is about twice the value for silicon. Keywords: dark matter; detectors; low temperature; semiconductors; defects; WIMP. PACS

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New Partition Factor Calculations for Evaluating the Damage of Low Energy Ions in Silicon

Cited by 34 publications

References 37 publications

Partitioning to elastic and inelastic processes of the energy deposited by low energy ions in silicon detectors

Partitioning to elastic and inelastic processes of the energy deposited by low energy ions in silicon detectors

Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement

Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter

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