New Opportunities in Lead Selenide Nanolayers

Abstract

The article deals with the peculiarities of creation of effective negative pressure and the increase in the forbidden gap width in PbSe nanolayers. The dielectric state that maybe realized under these conditions and their appropriate doping can be considered as a new resource in lead selenide nanolayers. The increasing of the tangential lattice constant with higher growth temperature and layer growth rate confirms this consideration. When determining the forbidden gap width, the optical transmission spectra were processed by a model of the Fabry-Perot interferometer, and, at high concentration of free current carriers, the absorption on them and their degeneracy were taken into consideration.

High Deformations in Lead Selenide Nanolayers and Related New Properties

“…At higher growth rates 6 nm s -1 < v < 20 nm s -1 , both for the thickness of layers <100 and 100-200nm, relaxation of strains increases due to the mismatch emerging at the boundaries of subgrains (Figure 3b). 4,19 These conclusions are also illustrated by Figure 3c, which shows the dependence of deformation on the thickness of layers, and that, at the layer thickness of the layer 181 nm, the deformation also increases with the increasing growth rate. A specific role of nonstoichiometric defects with their annihilation in the nuclei of dislocations is manifested with the formation of supercritical layers as well.…”

“…), the values of lead selenide band gap determined with varying thickness of layers from 4 μm to 70nm varied from 0.286 to 0.465 eV. 2,25 When the texture of the tetragonal phase appears in the X-ray spectrum, a new level emerges in the conduction band. Taking into account the effect of deformation on optical characteristics, in Figure 6 is shown the spectral dependence of α-αfr.car.…”

“…In thin strained layers, a slight change in the distance between the atoms constituting the compound, for example, with tensile strain is accompanied by an increase in the lattice constant and the band gap, while the mobility of current carriers decreases more significantly than without relaxation of strains at the substrate-layer interface. 2 As the investigation showed, it is important that, when the strained state is retained for two and more years, new opportunities to control smoothly and flexibly the properties of the nanolayers of IV-VI semiconductors and to realize innovative semiconductor device solutions are viewed. 3 Hence the strained nanolayers can be classified as new nanomaterials.…”

“…Figure 2shows the dependences of the thickness l of layers on the duration of their growth on KCl(100) substrates with two different distances between the substrate and the open edge of the quartz ampoule with the source I: 2.5 and 12 mm 14. …”

Фотоприемники Ик-Диапазона На Основе Изопериодических Эпитаксиальных Слоев Халькогенидов Свинца-Олова

“…Наряду с этим, при построении инфракрасных детекторов не менее важной проблемой является выбор относительно недорогой и достаточно эффективной технологии получения высококачественных эпитаксиальных слоев (ЭС) -основы для формирования фотодиодов Шоттки. На сегодня жидкофазная эпитаксия (ЖФЭ) остается одним из альтернативных методов выращивания ИЭС МТР Pb 1−x Sn x Te 1−y Se y с низкой концентрацией носителей тока при заданном составе и типе проводимости, исключая легирования [2,3].…”