Фотоприемники Ик-Диапазона На Основе Изопериодических Эпитаксиальных Слоев Халькогенидов Свинца-Олова

Abstract

IR photodetectors have been made on Pb/δ-layer/ p -Pb_1 –_ x Sn_ x Te_1 –_ y Se_ y / p ^+-Pb_0.8Sn_0.2Te/Au and Au/δ-layer/ n -Pb_1 –_ x Sn_ x Te_1 –_ y Se_ y (BaF_2)/Pb surface-barrier structures prepared by liquid-phase epitaxy and thermal evaporation. At ~170 K, peak wavelength λ_ p ~ 7.9–8.2 μm, and cutoff wavelength λ_ c ~ 8.2–8.5 μm, the former surface-barrier structure has product R _0 A (where R _0 is the zero-bias differential resistance and A is the active surface area) = 0.31–0.97 Ω cm^2, peak quantum efficiency η_λ = 0.32–0.48, and specific detectability $$D_{\lambda }^{*}$$ = (0.72–1.83) × 10^10 cm Hz^1/2 W^–1. For photodiodes made on the latter surface-barrier structure, these parameters measured at ~80 K are R _0 A = 1.71–2.72 Ω cm^2, η_λ = 0.34–0.49, and $$D_{\lambda }^{*}$$ = (3.02–4.51) × 10^10 cm Hz^1/2 W^–1 at λ_ p ~ 8.6–12.3 μm and λ_ c ~ 9.2–12.9 μm.