2012
DOI: 10.1016/j.optmat.2011.12.019
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New methods for determining the band gap behavior of ZnO

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Cited by 17 publications
(7 citation statements)
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“…It is clear that the obtained values of E g are remarkably little dependence on the Ga content. The determined energy gaps for undoped and Ga doped ZnO nanostructured films thin film are in agreement with that published in the literature by other authors [36][37][38][39].…”
Section: Wavelength (Nm)supporting
confidence: 90%
“…It is clear that the obtained values of E g are remarkably little dependence on the Ga content. The determined energy gaps for undoped and Ga doped ZnO nanostructured films thin film are in agreement with that published in the literature by other authors [36][37][38][39].…”
Section: Wavelength (Nm)supporting
confidence: 90%
“…47 Thus, the variation in the reported band gaps is a topic of studies on its own. 4,47,52 However, as can be seen from Figs. 3 and 4, the measured data in this study fall well within the range of experimentally reported band gaps in the literature.…”
Section: Iðeþmentioning
confidence: 90%
“…9,10 ZnO-based semiconductors with a wide band gap (3.37 eV) have been identied as active photocatalysts for organic pollutants in gaseous or aqueous phases due to their nontoxicity, photochemical stability, low price, abundance in nature and being environmentally friendly. [11][12][13] In comparison with TiO 2 , ZnO is a better alternative because of the numerous point defects mainly from oxygen vacancies, higher production of hydroxyl ions and higher photoactivity (by a factor of 2-3) in both UV and sunlight irradiation for the decontamination of water. 4 Also, ZnO is an interesting example of materials having the capability of low temperature growth with many different kinds of morphologies including wires, rods, tubes, particles and ower shape at nano scale.…”
Section: Introductionmentioning
confidence: 99%