New methodology for drain current local variability characterization using Y function method

Abstract

5.2International audienc

A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

“…Dividing the drain current by the square root of the transconductance in (25) serves the purpose of canceling those effects [69,70]. Once the degradation effects are canceled out, the resulting ''Y'' function is supposed to become a straight line for V G ) V T , which can be then extrapolated to intersect the V G axis at V G = V T [71].…”

Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors

“…According to Eq. ( 1), the current mismatch could be attributed to uncorrelated origins of parameter variations: V TH , β, and R SD where β=μ 0 C ox V D W/L current gain factor, and R SD the source/drain series resistance [1,2].…”

High-Performance Bidirectional Chemical Sensor Platform Using Double-Gate Ion-Sensitive Field-Effect Transistor with Microwave-Assisted Ni-Silicide Schottky-Barrier Source/Drain

“…In particular, the double-gate (DG) sensing mode of ISFETs can amplify sensitivity through capacitive coupling considering the capacitances of the gate electrodes positioned above and below the thin-film channel without additional amplifying circuitry [11]. Meanwhile, the increase in series resistance and capacitance of the source/drain (S/D) junction of the ISFET due to miniaturization and integration of biomedical sensors can limit rapid biosignal responses, which are important for understanding S/D formation in early diagnosis and improved therapy in the future [12,13]. Typically, S/D formation is achieved via high-dose ion implantation and high-temperature activation annealing processes.…”