New ion beam materials laboratory for materials modification and irradiation effects research

Zhang, Yongfeng; Crespillo, Miguel L.; Xue, Haizhou; Jin, Ke; Chen, Chien‐Hung; Fontana, Cristiano Lino; Graham, Joseph; Weber, William J.

doi:10.1016/j.nimb.2014.07.028

Cited by 128 publications

(67 citation statements)

References 48 publications

(37 reference statements)

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“…Two-side polished samples with dimensions of 1 Â 10 Â 10 mm 3 were irradiated at room temperature under a vacuum of 5 Â 10 À 5 Pa, at the Ion Beam Materials Laboratory (IBML) [35]. They were tilted 5°with respect to the incident ion beam to avoid ion channeling.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Recently, a new ion bean induced luminescence (IBIL) system has been successfully developed in the multipurpose end-station in the L3 beamline of the Ion Beam Materials Laboratory (IBML) at the University of Tennessee, Knoxville, (IBML, http://ibml.utk.edu/) [35] in order to provide insights on radiation damage mechanisms and perform in-situ material characterization during irradiation. Examples of experiments conducted in the new system are presented here to illustrate the potential for characterizing radiation effects in ceramic materials with fusion applications using IBIL.…”

Section: Introductionmentioning

confidence: 99%

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In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

Crespillo

Graham

Zhang

et al. 2016

Journal of Luminescence

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a b s t r a c tReal-time, in-situ ionoluminescence measurements provide information of evolution of emission bands with ion fluence, and thereby establish a correlation between point defect kinetics and phase stability. Using fast light ions (2 MeV H and 3.5 He MeV) and medium mass-high energy ions (8 MeV O, E¼ 0.5 MeV/amu), scintillation materials of a-SiO 2 , crystalline quartz, and Al 2 O 3 are comparatively investigated at room temperature with the aim of obtaining a further insight on the structural defects induced by ion irradiation and understand the role of electronic energy loss on the damage processes. For more energetic heavy ions, the electronic energy deposition pattern offers higher rates of excitation deeper into the material and allows to evaluate the competing mechanisms between the radiative and non-radiative de-excitation processes. Irradiations with 8 MeV O ions have been selected corresponding to the electronic stopping regime, where the electronic stopping power is dominant, and above the critical amorphization threshold for quartz. The usefulness of IBIL and its specific capabilities as a sensitive tool to investigate the material characterization and evaluation of radiation effects are demonstrated.Published by Elsevier B.V.

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

Crespillo

Graham

Zhang

et al. 2016

Journal of Luminescence

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“…The irradiation was performed at room temperature and the flux is fixed at 2.77×10 11 cm -2 s -1 . In order to produce an approximately uniform damage region in a depth of about 3.5 µm, NiCoCr samples were irradiated with Ni ions in energies of 16 MeV, 8 MeV, 4 MeV and 2 MeV, respectively, to different doses in displacements per atoms (dpa) from 0.01 to 1 dpa for the polycrystals and 0.01 to 0.3 dpa for the single crystal samples [44,45]. At each ion fluence, the local dose was determined by SRIM calculations [46] using the Kinchen-Pease model under an assumed threshold displacement energy of 40 eV for all elements [11].…”

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confidence: 99%

Local Structure and Short-Range Order in a NiCoCr Solid Solution Alloy

et al. 2017

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“…These include electrical characterization techniques, such as deep-level transient spectroscopy and capacitancevoltage profiling and optical characterization techniques, such as cathodeluminescence and reflectance modulation. Physical and chemical characterization techniques can also be applied, including electron energy loss spectroscopy, (Gumbs and Horing, 1991) secondary ion mass spectrometry (Zhang et al, 2014) and chemical milling.…”

Section: Resultsmentioning

confidence: 99%

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

Huang¹,

Gao²,

Cardimona³

et al. 2015

American Journal of Space Science

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A multi-timescale hybrid model is proposed to study microscopically the degraded performance of electronic devices, covering three individual stages of radiation effects studies, including ultra-fast displacement cascade, intermediate defect stabilization and cluster formation, as well as slow defect reaction and migration. Realistic interatomic potentials are employed in molecular-dynamics calculations for the first two stages up to 100 ns as well as for the system composed of layers with thicknesses of hundreds of times the lattice constant. These quasi-steady-state results for individual layers are input into a ratediffusion theory as initial conditions to calculate the steady-state distribution of point defects in a mesoscopic-scale layered-structure system, including planar biased dislocation loops and spherical neutral voids, on a much longer time scale. Assisted by the density-functional theory for specifying electronic properties of point defects, the resulting spatial distributions of these defects and clusters are taken into account in studying the degradation of electronic and optoelectronic devices, e.g., carrier momentum-relaxation time, defect-mediated non-radiative recombination, defect-assisted tunneling of electrons and defect or charged-defect Raman scattering as well. Such theoretical studies are expected to be crucial in fully understanding the physical mechanism for identifying defect species, performance degradations in field-effect transistors, photo-detectors, light-emitting diodes and solar cells and in the development of effective mitigation methods during their microscopic structure design stages.

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New ion beam materials laboratory for materials modification and irradiation effects research

Cited by 128 publications

References 48 publications

In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

Local Structure and Short-Range Order in a NiCoCr Solid Solution Alloy

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

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