New insights for uniform and large-volume CdZnTe and CdMnTe detectors

Growth and characterization of CdMnTe by the vertical Bridgman technique

“…While at BNL, Kim et al [7] achieved a µτ e value for CMT as high as 5x10 -3 cm 2 /V. In the recent past, an energy resolution of 2.1% at 662 keV was achieved for a 5x5x12 mm 3 CdMnTedetector [8], proving the potential of CMT as an alternative to CZT for gamma-ray detector applications. The typical concentration of Te inclusions/precipitates observed in CMT [9] was reported as ~1-3.5x10 5 cm -3 , whichis similar to the values for CZT samples.However, the concentration was in the range 1-3x10 4 cm -3 for Bridgman-grown CMT, as reported by Du et al [10].…”

Growing high-quality ternary CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism

“…Recently, an alternative wide band-gap CdTe-based ternary material system, CdMnTe, has been used in many optoelectronic applications. For instance, CdMnTe bulk has been grown by the Bridgman method to fabricate room-temperature X-ray and γ-ray detectors [10][11][12]. However, few reports have been published on the growth and characterization of epitaxial CdMnTe layers on Si substrates.…”