Growth and characterization of CdMnTe by the vertical Bridgman technique

Roy, Utpal; Camarda, G. S.; Cui, Yonggang; Gu, Genda; Gul, R.; Hossain, Anwar; Yang, Ge; Egarievwe, Stephen U.; James, R. B.

doi:10.1016/j.jcrysgro.2015.12.017

Cited by 30 publications

(10 citation statements)

References 22 publications

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“…The wafer was found to be highly decorated with sub-grain boundaries and their network, possibly caused by thermal stress introduced during the fast growth and fast cooling processes. Very less thermal stress and sub-grain boundaries however was observed for the conventionally grown CMT ingot [25].…”

Section: Resultsmentioning

confidence: 89%

“…Very few Te inclusions were found to be present at the grain boundary; they were observed to be slightly elongated with a size varying between 5-7 µm. In the ingots grown with conventional growth sequence, the grain boundaries were observed to be heavily decorated with Te inclusions [25]. The structural quality of the ingot was evaluated by Synchrotron White Beam X-ray Diffraction Topography (WBXDT) in the reflection mode.…”

Section: Resultsmentioning

confidence: 99%

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Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Roy

Camarda

Cui

et al. 2019

Journal of Crystal Growth

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We grew Cd 1-x Mn x Te crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge. The Te precipitations (size < 1-µm diameter) were found to segregate towards the last-to-freeze section of the ingot. Te inclusions with a size 5-7 µm were observed at the grain boundary located near the last-to-freeze section, while the bottom and middle parts of the ingot showed no Te inclusions, even at the grain boundaries. X-ray topographic analysis was used to characterize the distribution of thermal stress in the ingot.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Roy

Camarda

Cui

et al. 2019

Journal of Crystal Growth

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“…CMT wafers were cut from the ingot along (111) face of the ingot. The wafers were then diced into small slices with the dimensions of 10 × 10 × 2 mm 3 . The slices with a resistivity of about 10 9 Ω•cm were chosen for multi-step annealing treatment.…”

Section: Methodsmentioning

confidence: 99%

“…It is considered to be the substitute material of CdZnTe because of its optimal band-gap energy, fine mechanical stability, and near-unity segregation coefficient of Mn [2]. At present, CMT has attracted interest for the application of a room temperature radiation detector due to its wide band-gap, high resistivity, and good electron-transport properties [3][4][5]. However, CMT single crystals usually have some structure defects, especially Te inclusions, which will badly deteriorate the detector performance [6].…”

Section: Introductionmentioning

confidence: 99%

Study of Detector-Grade CdMnTe:In Crystals Obtained by a Multi-Step Post-Growth Annealing Method

Chen

Liu

et al. 2018

Crystals

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A multi-step annealing method was successfully applied to inclusions reduction and resistivity improvement of CdMnTe:In (CMT:In) single crystals with high resistivity, including a Cd atmosphere annealing step followed by a Te atmosphere annealing step. After the Cd atmosphere annealing step, the density of Te inclusions was reduced distinctly, and it could be also decreased in the subsequent step of re-annealing under Te atmosphere. Both the resistivity and IR transmittance decreased notably after Cd atmosphere annealing, whereas they increased tremendously after re-annealing under a Te atmosphere. The reduction of full-width at-half-maximum (FWHM) and the increase of the intensity of the X-ray rocking curve indicated an improvement of the crystal quality. Meanwhile, after Cd atmosphere annealing, the increase of the intensity of the (D0,X) peak and the disappearance of the (A0,X) peak in photoluminescence (PL) measurements suggested further that the crystal quality was improved. The detector performance was enhanced obviously after annealing. The higher the annealing temperature, the better the performance was. The detector fabricated by CMT:In slice (Cd atmosphere annealing at 1073 K for 240 h and Te atmosphere re-annealing at 773 K for 120 h) with 9.43% energy resolution and 1.25 × 10−3 cm2/V μτ value had the best detector performance.

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“…CdTe and CdZnTe are commercially available [1]- [4], but the cost of their production is very high due to low growth yields of crystals with a high-resistivity, less defects and high-intrinsic efficiency. Recently, researchers have been investigating cadmium manganese telluride (CdMnTe) for room-temperature nuclear and radiological detection applications [5]- [10]. The main advantage of growing CdMnTe crystal is that the segregation coefficient of Mn in cadmium telluride (CdTe) matrix is about 1.0, compared to 1.35 for Zn in the case of CdZnTe [9].…”

Section: Introductionmentioning

confidence: 99%

Thermal Annealing of CdMnTe Material Being Developed for Nuclear Radiation Detection Applications

Adams¹,

Agbalagba²,

Jow³

et al. 2016

IOSR

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Cadmium manganese telluride (CdMnTe) is one of the semiconductor materials with potential applications at room-temperature for nuclear and radiological detection. CdMnTe crystals grown by Bridgman technique are prone to tellurium inclusions and related defects that limit their performance as X-rays and gamma-rays detectors. The major reason for this is that they are grown in a tellurium-rich environment. These defects could trap charges that are generated by X-rays and gamma rays thereby degrading the charge transport properties of the detectors and reducing their carrier lifetime. This in turn leads to poor performance by the detector. One of the solutions to this problem is post-growth thermal annealing. In this paper we present experimental results of annealing a CdMnTe wafer at 720 o C and in cadmium vapor. The CdMnTe wafer and cadmium were sealed in a quartz ampoule at a vacuum of 10-5 mbar. We used a three-zone furnace that enabled us to adjust the three heating elements to get a flat region of 720 o C in the temperature profile where the wafer was annealed. Infrared transmission microscopy showed changes to the sizes and positions of the tellurium inclusions. There are reductions in the dimensions of the medium-size Te inclusions. Some Te inclusions were completely eliminated while others broke up to form much smaller inclusions. Current-voltage measurements showed that the resistivity of the CdMnTe wafer was reduced by 71 %, from 2.44 x 10 5 -cm to 7.17 x 10 4 -cm after annealing in Cd vapor.

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Growth and characterization of CdMnTe by the vertical Bridgman technique

Cited by 30 publications

References 22 publications

Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Study of Detector-Grade CdMnTe:In Crystals Obtained by a Multi-Step Post-Growth Annealing Method

Thermal Annealing of CdMnTe Material Being Developed for Nuclear Radiation Detection Applications

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