New insight into proton-induced latchup: Experiment and modeling

Levinson, J.; Akkerman, A.; Victoria, M.; Hass, M.; Ilberg, D.; Alurralde, M.; Henneck, R.

doi:10.1063/1.110283

Cited by 28 publications

(13 citation statements)

References 10 publications

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“…In a 3D polar coordinate system, , then (2) can be converted to (3) which can be further reduced to (4) Since is much smaller than (10 m), (4) can be further reduced to (5) where is equal to . In this case, is essentially the "physical" upset cross section to heavy ions of this particular critical node.…”

Section: Calculation and Discussionmentioning

confidence: 99%

“…There has been a plethora of research work carried out in the past to study proton induced single event phenomenon in VLSI devices as well as how the heavy ion and proton upset cross sections are related to each other [5]- [11]. It is the intention of this paper to propose a simple method to estimate the saturated proton induced upset cross-section in a 6 T SOI SRAM cell with just layout and technology parameters.…”

Section: Introductionmentioning

confidence: 98%

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Proton Induced Single Event Upset in 6 T SOI SRAMs

Liu

Hughes³

2006

IEEE Trans. Nucl. Sci.

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Section: Calculation and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Proton Induced Single Event Upset in 6 T SOI SRAMs

Liu

Hughes³

2006

IEEE Trans. Nucl. Sci.

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“…They appear to be overly conservative; in effect, too much energy is deposited, resulting in a calculated latch-up rate that is Ntwo orders of magnitude too high. At present, two more elaborate models for neutrodproton-induced latch-up have been published [44], [47], which improve on simple energy deposition as the only criterion. One is based on track electric field reduction of the LET of the recoils 1471, but the tools to implement it are not readily available.…”

Section: A Latch-upmentioning

confidence: 99%

“…Only a small number of parts has been found to be prone to neutrodproton-induced latch-up. Included are specific memories [45], [47], a number of microprocessors [46], [48], and two specific types of gate arrays [431, [44]. From all data that are available, it appears that parts that undergo heavy-ion-induced latch-up will also be prone to neutrodproton latch-up if the LET threshold for latch-up is <5 MeVcm2/mg.…”

Section: A Latch-upmentioning

confidence: 99%

Single-event effects in avionics

Normand

1996

IEEE Trans. Nucl. Sci.

333

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Abstruct-The occurrence of single-event upset (SEU) in aircraft electronics has evolved from a series of interesting anecdotal incidents to accepted fact. A study completed in 1992 demonstrated that SEU's are real, that the measured in-flight rates correlate with the atmospheric neutron flux, and that the rates can be calculated using laboratory SEU data. Once avionics SEU was shown to be an actual effect, it had to be dealt with in avionics designs. The major concern is in random access memories (RAM's), both static (SRAM's) and dynamic (DRAM'S), because these microelectronic devices contain the largest number of bits, but other parts, such as microprocessors, are also potentially susceptible to upset. In addition, other singleevent effects (SEE's), specifically latch-up and burnout, can also be induced by atmospheric neutrons.

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“…There has been a lot of research work carried out in the past studying proton induced single event phenomenon in very large scale integration devices [5][6][7][8][9][10][11][12][13]. In this paper, we offer a simple method to estimate the saturated proton induced upset cross section for a 6T silicon-on-insulator (SOI) SRAM cell with layout and technology parameters.…”

Section: Introductionmentioning

confidence: 99%

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

Li¹,

Zhou²,

Liu³

2012

Journal of Nuclear Science and Technology

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In this paper, an efficient physics-based method to estimate the saturated proton upset cross section for six-transistor (6T) silicon-on-insulator (SOI) static random access memory (SRAM) cells using layout and technology parameters is proposed. This method calculates the effects of radiation based on device physics. The simple method handles the problem with ease by SPICE simulations, which can be divided into two stages. At first, it uses a standard SPICE program to predict the cross section for recoiling heavy ions with linear energy transfer (LET) of 14 MeV-cm 2 /mg. Then, the predicted cross section for recoiling heavy ions with LET of 14 MeV-cm 2 /mg is used to estimate the saturated proton upset cross section for 6T SOI SRAM cells with a simple model. The calculated proton induced upset cross section based on this method is in good agreement with the test results of 6T SOI SRAM cells processed using 0.15 mm technology.

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New insight into proton-induced latchup: Experiment and modeling

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Cited by 28 publications

References 10 publications

Proton Induced Single Event Upset in 6 T SOI SRAMs

Proton Induced Single Event Upset in 6 T SOI SRAMs

Single-event effects in avionics

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

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