New Infrared Luminescence from Bi-doped Glasses

Fujimoto, Yasushi

doi:10.5772/7944

Cited by 7 publications

(8 citation statements)

References 61 publications

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“…Supplementary Fig. 6 shows that the differences observed in these spectra between the implanted and unimplanted regions were significantly greater than that between 13 , and melt-doped n-type Ge 20 Se 70 Bi 10 after Kumar 35 , are shown. The two low and high binding energy peaks, which should have equal spacing, originate from the Bi 4f 7/2 and 4f 5/2 levels, respectively.…”

Section: Resultsmentioning

confidence: 91%

“…The binding energy of Bi is determined mainly by its oxidation state, and tends to increase with increasing oxidation state. The broad 4f 7/2 level of Bi melt-doped silicate at 160.0 eV contains components of Bi 5 þ at 160.6 eV and Bi 4 þ at 159.8 eV 13 ; Bi 2 O 3 has a binding energy of 158.9 eV corresponding to Bi 3 þ (ref. 14).…”

Section: Resultsmentioning

confidence: 99%

“…(a) XPS spectrum of Bi from n-type 1 Â 10 16 ions cm À 2 Bi-implanted GaLaSO, 2 Â 10 16 ions cm À 2 Bi-implanted GeTe (taken at the centre of the Bi implants), Bi metal and Bi 2 O 3 . Also, the XPS spectrum for melt-doped Si 28 O 66 Al 4 Bi 2 glass after Fujimoto 13 , and melt-doped n-type Ge 20 Se 70 Bi 10 after Kumar 35 , are shown. The two low and high binding energy peaks, which should have equal spacing, originate from the Bi 4f 7/2 and 4f 5/2 levels, respectively.…”

Section: Resultsmentioning

confidence: 99%

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n-type chalcogenides by ion implantation

et al. 2014

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Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch ¼ S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (B5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

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Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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n-type chalcogenides by ion implantation

et al. 2014

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“…As a consequence, oxygen vacancies are created in the glass. It is also known that both rare earth metals, i.e., Ho, Tm, Yb [9], Nd [16], Ce [17], and Er [18] and the transition metals, such as Mn [13], Cr [12], and Bi [19,[19][20][21][22], have been used as activators for the GeO 2 glass-like matrix. Above all, bismuth especially plays an extraordinary role because it causes an IR emission in the glass-like matrix.…”

Section: Introductionmentioning

confidence: 99%

Crystallization of GeO2–Al2O3–Bi2O3 Glass

Płońska

Plewa

2020

Crystals

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In the presented work, two kinds of germanium oxide glass with different compositions, namely GeO2 and GeO2–Al2O3–Bi2O3, were investigated. After controlled crystallization of a glassy sample, the emission in the NIR-range was determined (1165 nm with excitation at 470 nm). To better understanding the kinetics of the glass crystallization, the activation energy was also determined by applying the Kissinger method. The obtained results show that in the case of GeO2–Al2O3–Bi2O3, activation energy value was 400 and 477 kJ/mol, which means that such values are significantly larger than for pure GeO2 (254 kJ/mol). The investigations also show that two phases crystallized in the complex glass matrix: the mullite-like phase and germanium oxide.

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“…Since the first demonstration of the broadband near infrared (NIR) luminescence in the bismuth-doped silicate glass [1], bismuth-doped materials, including crystal, glass, fibre, and so on, have been developed and studied for photonic applications at the extended band [2][3][4][5][6][7]. Especially, bismuth-doped optical fibres (BDFs) have been developed for fibre amplifiers and lasers from 1250 to 1500nm and 1600 to 1800nm [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Effects of Post Treatments on Bismuth-Doped and Bismuth/ Erbium Co-doped Optical Fibres

Wei¹,

Ding²,

Fan³

et al. 2018

Bismuth - Advanced Applications and Defects Characterization

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Bismuth-doped and bismuth/erbium co-doped optical fibres have attracted much attention for their great potential in the photonic applications at ultrawide O, E, S, C and L bands. The effects of post treatments, including various heating, high energy ray radiation, laser radiation and H 2 loading processes, on these fibres' performance, functionality and stability have been experimentally studied. Experimental results demonstrate that these post treatments could allow us to get insights regarding the formation and the structure of bismuth active centre (BAC) and be used to control and regulate the formation of BAC.Keywords: bismuth-doped fibre (BDF), bismuth and erbium co-doped optical fibre (BEDF), bismuth active centre (BAC), broadband, post treatments, thermal treatment, gamma radiation, photo-bleaching, H 2 loading

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New Infrared Luminescence from Bi-doped Glasses

Cited by 7 publications

References 61 publications

n-type chalcogenides by ion implantation

n-type chalcogenides by ion implantation

Crystallization of GeO2–Al2O3–Bi2O3 Glass

Effects of Post Treatments on Bismuth-Doped and Bismuth/ Erbium Co-doped Optical Fibres

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