Bismuth - Advanced Applications and Defects Characterization 2018
DOI: 10.5772/intechopen.75106
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Effects of Post Treatments on Bismuth-Doped and Bismuth/ Erbium Co-doped Optical Fibres

Abstract: Bismuth-doped and bismuth/erbium co-doped optical fibres have attracted much attention for their great potential in the photonic applications at ultrawide O, E, S, C and L bands. The effects of post treatments, including various heating, high energy ray radiation, laser radiation and H 2 loading processes, on these fibres' performance, functionality and stability have been experimentally studied. Experimental results demonstrate that these post treatments could allow us to get insights regarding the formation … Show more

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Cited by 3 publications
(4 citation statements)
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“…[13][14][15][16] In previous studies, researchers have successfully achieved optical amplification in the wavelength ranges of 1350-1500 nm and 1600-1800 nm by co-doped germanium and bismuth in silica fibers. [17][18][19][20] This advancement holds significance for expanding communication bandwidth through integration with Er 3+ L-band amplification. [20][21][22] The consensus attributes the luminescence observed within these spectral bands to bismuth near-infrared active luminescence centers (BAC), which have been named BAC-Si and BAC-Ge for the respective wavelength range.…”
Section: Introductionmentioning
confidence: 99%
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“…[13][14][15][16] In previous studies, researchers have successfully achieved optical amplification in the wavelength ranges of 1350-1500 nm and 1600-1800 nm by co-doped germanium and bismuth in silica fibers. [17][18][19][20] This advancement holds significance for expanding communication bandwidth through integration with Er 3+ L-band amplification. [20][21][22] The consensus attributes the luminescence observed within these spectral bands to bismuth near-infrared active luminescence centers (BAC), which have been named BAC-Si and BAC-Ge for the respective wavelength range.…”
Section: Introductionmentioning
confidence: 99%
“…[17][18][19][20] This advancement holds significance for expanding communication bandwidth through integration with Er 3+ L-band amplification. [20][21][22] The consensus attributes the luminescence observed within these spectral bands to bismuth near-infrared active luminescence centers (BAC), which have been named BAC-Si and BAC-Ge for the respective wavelength range. 19,20 Numerous research studies have mainly focused on optical amplification and laser phenomena of Bi-doped silica fiber, or the influence of various factors on them.…”
Section: Introductionmentioning
confidence: 99%
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“…Based on the previous researches, it was generally accepted that the formation of BACs greatly depends on the material compositions [12,15]. With different doping elements such as aluminum, phosphorus, silicon and germanium in the glass environment, there are four types of BACs in the BDFs, namely BAC associated with aluminum (BAC-Al), BAC associated with phosphorus (BAC-P), BAC associated with silicon (BAC-Si), and BAC associated with germanium (BAC-Ge), respectively [16][17][18][19]. Multiple absorption peaks of these BACs have been observed in BDFs and BEDFs, for example, BAC-Al (510, 700, and 1050 nm), BAC-P (460, 750, and 1300 nm), BAC-Si (420, 830, and 1400 nm), and BAC-Ge (463, 925, and 1600 nm) [17,18].…”
Section: Introductionmentioning
confidence: 99%