1987
DOI: 10.1116/1.583904
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New high current low energy ion source

Abstract: A multiaperture ion source with adjustable optics to provide well-collimated, high-current-density, low-to mediumenergy ion beamsWe have developed a new type ofion source which is excited by a low energy and high current electron beam. The source has an extractable ion current density up to 0.62 A/cm 2 and a low acceleration voltage less than 60 V. This ion source will open a new way for low energy ion processing such as damageless ion etching, ion beam crystal growth, and deposition.

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Cited by 67 publications
(16 citation statements)
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“…EBEP enables the production of highly ionized plasma at low pressures by adjusting electron beam energy close to the maximum electron impact ionization energy of the source gas. The higher density of source gas inside the EBEP system increases the pressure inside the chamber, which assists in controlling the morphology of CNWs [ 44 , 45 ]. In addition to these plasma-enhanced deposition techniques, several reports on the growth of carbon nanostructures and graphene flakes have been successfully demonstrated by arc discharge plasma [ 46 , 47 ].…”
Section: Plasma: Potential Approach For Carbon Nanowall (Cnw) Syntmentioning
confidence: 99%
“…EBEP enables the production of highly ionized plasma at low pressures by adjusting electron beam energy close to the maximum electron impact ionization energy of the source gas. The higher density of source gas inside the EBEP system increases the pressure inside the chamber, which assists in controlling the morphology of CNWs [ 44 , 45 ]. In addition to these plasma-enhanced deposition techniques, several reports on the growth of carbon nanostructures and graphene flakes have been successfully demonstrated by arc discharge plasma [ 46 , 47 ].…”
Section: Plasma: Potential Approach For Carbon Nanowall (Cnw) Syntmentioning
confidence: 99%
“…Surface treatment of the p‐type silicon substrates was performed through keeping them in argon plasma generated by an electron‐beam excited plasma system; in so doing, electron irradiation was conducted for 1, 3, 5, 10 and 30 minutes under voltage of +50 V applied to the substrate (Figure ). In this treatment, current flowing in the substrate was about 20 mA/cm 2 .…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The samples after barrel nitriding were nitrided using an electron beam excited plasma (EBEP) source. The EBEP source is a unique electron beam source that can produce amperes of beam current with a beam kinetic energy less than 100 eV, which is lower by several orders of magnitude than the energy of electron beams produced by other ordinary beam sources 9. The vacuum chamber was evacuated below 10 −4 Pa before processing.…”
Section: Experimental Partmentioning
confidence: 99%
“…The EBEP source is a unique electron beam source that can produce amperes of beam current with a beam kinetic energy less than 100 eV, which is lower by several orders of magnitude than the energy of electron beams produced by other ordinary beam sources. [9] The vacuum chamber was evacuated below 10 À4 Pa before processing. After elevating the sample temperature to a holding temperature, Ar plasma was generated for pretreatment to eliminate the surface contaminants or oxides.…”
Section: Plasma Nitridingmentioning
confidence: 99%