New GaAs quantum wires on {111}B facets by selective MOCVD

Growth of Semiconductor Nanocrystals

“…For example, Ando and Fukui reported the formation of GaAs/AlGaAs by SAG [58,64]. For example, Ando and Fukui reported the formation of GaAs/AlGaAs by SAG [58,64].…”

“…Ando et al systematically investigated the formation of a trapezoidal structure surrounded by uniform (111)B facets [64] by growing GaAs/ AlGaAs heterostructures under the same conditions. Thus, these are promising to characterize the carrier transport and carrier scattering mechanisms [58]. They grew the AlGaAs/n-AlGaAs/GaAs heterostructures at high T G and lower [AsH 3 ].…”

Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy

“…Recently, nanostructures such as quantum dots [1,2] and quantum wires [3,4] have been fabricated by combining the bottom-up crystal growth techniques and top-down microand nanofabrication techniques by using molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE). Among these, area selective epitaxy (ASE) is one of the most promising methods to fabricate semiconductor micro-and nanostructures because it produces less damage in the substrate than the direct machining techniques such as reactive ion etching (RIE) and focused ion beam implantation (FIB) [5,6].…”

Structural and optical characterization of self-formed GaP/InP quantum dots

“…There are various methods for fabrication of QDs/QWRs. [1][2][3] Among them, the selfformation method is one of the promising candidates, because it causes little damage, is of high dot density, and is nonlaborious. In the self-formation method of QDs, Stranski-Krastanov (S-K) mode growth is often utilized, 4 The density of dots made by S-K mode is around 10 9 ~ 10 10 cm -2 .…”