Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials 2016
DOI: 10.7567/ssdm.2016.a-2-03
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New Findings on the Gate-Length Dependence of Subthreshold Swing for Ultra-Thin-Body Negative Capacitance FETs

Cheng-Ru Tsai1
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Electrostatic Integrity in Negative-Capacitance FETs – A Subthreshold Modeling Approach

Su
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You
2
2019
2019 IEEE International Electron Devices Meeting (IEDM)
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Electrostatic Integrity in Negative-Capacitance FETs – A Subthreshold Modeling Approach

Su
1
,
You
2
2019
2019 IEEE International Electron Devices Meeting (IEDM)
10
0
11
0
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Investigation of short-channel effects in 2D negative-capacitance field-effect transistors

You
1
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Tsai
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Su
3
2017
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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Evaluation of NC-FinFET Based Subsystem-Level Logic Circuits

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Hu
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2019
IEEE Trans. Electron Devices
32
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