New encapsulation development for fine pitch IC devices

Yao, Yasuhiro; Njoman, B.; Chua, K.H.; Lin, Tingyu

doi:10.1016/j.microrel.2004.10.008

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…After 50 μ m BPP wire bonding was conducted with ϕ 23 μ m wire, the maximum wire length meeting the acceptable wire sweep specification (less than 4 per cent of the wire length) was only 4.1 mm, not enough for targeted PBGA applications. Non‐sweep encapsulation, combination of a glob top process and a transfer molding process, was applied (Yao et al , 2005). An epoxy was dispensed on the bonded wires from four sides of the die top, and UV light cured the epoxy fixing the wires in place.…”

Section: Solutions and Findings For Reliable Fine And Ultra‐fine Pitch Wire Bondingmentioning

confidence: 99%

Fine and ultra‐fine pitch wire bonding: challenges and solutions

Zhong

2009

Microelectronics International

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PurposeThe purpose of this paper is to review recent advances in fine and ultra‐fine pitch wire bonding.Design/methodology/approachDozens of journal and conference articles published recently are reviewed.FindingsThe problems/challenges such as possible wire sweep and decreased bonding strength due to small wire sizes, non‐sticking, metal pad peeling, narrow process windows, wire open and short tail defects are analysed. The solutions to the problems and recent findings/developments in fine and ultra‐fine pitch wire bonding are discussed.Research limitations/implicationsBecause of the page limitation, only brief discussions are given in this paper. Further reading is needed for more details.Originality/valueThis paper attempts to provide an introduction to recent developments and the trends in fine and ultra‐fine pitch wire bonding. With the references provided, readers may explore more deeply by reading the original articles.

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Section: Solutions and Findings For Reliable Fine And Ultra‐fine Pitch Wire Bondingmentioning

confidence: 99%

Fine and ultra‐fine pitch wire bonding: challenges and solutions

Zhong

2009

Microelectronics International

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“…[2][3][4][5] In the molding process the forces caused by resin flow can displace the fine wire loops. This flow-induced deformation of the wire loop can result in wire shorting and the failure of the device.…”

Section: Introductionmentioning

confidence: 99%

Microelectronic Wire Bonding with Insulated Au Wire: Effects of Process Parameters on Insulation Removal and Crescent Bonding

et al. 2008

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The characteristics of the crescent bond process with insulated Au wire are investigated. Au wire with a sub-micron thick insulation coating is bonded on standard Ag plated leadframe diepads at 493 K. The wire loops are oriented perpendicular to the ultrasonic horn. The pull force obtained with a basic bonding process of insulated Au wire and bare Au wire are optimized by iteration and compared. Subsequently, the process is modified for the application with insulated wire. To increase the pull force an insulation layer removing stage (cleaning stage) is inserted before the bonding stage. The cleaning stage consists of a scratching motion (shift) toward to the ball bond in combination with ultrasound. The pull force obtained in this way with the insulated wire is 90:1 AE 7:9 mN which is 2:4 AE 2:0 mN larger than that obtained with bare Au wire.

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