New emission line in highly excited GaN

Hvam, Jørn Märcher; Ejder, E.

doi:10.1016/0022-2313(76)90149-6

Cited by 28 publications

(15 citation statements)

References 9 publications

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“…It is caused by inelastic exciton-exciton scattering [5]. The measured peak energy of the P-Band is 3.460 eV at 17 MW/cm 2 .…”

Section: Photoluminescence At High Excitation Levelsmentioning

confidence: 97%

“…Reports of the HE PL of GaN to date were restricted to 1.8 K [5] or only gave room-temperature and 77 K spectra without identifying the observed emissions [6]. In Figure 2 HE luminescence spectra taken at various temperatures between 4 K and 270 K are shown for an excitation density of 8 MW/cm 2 .…”

Section: Temperature Dependence Of He-luminescence and Gain Spectramentioning

confidence: 99%

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Gain Spectroscopy of HVPE-Grown GaN

Eckey

Holst

Hoffmann

et al. 1997

MRS Internet j. nitride semicond. res.

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We report on photoluminescence and optical gain measurements of highly excited GaN crystals grown by hydride vapor physe epitaxy (HVPE). Inelastic scattering processes of excitons dominate the spontaneous emission spectrum under high excitation up to temperatures of 180 K. Towards room temperature phonon-assisted recombination of excitons and free carriers begins to dominate the spectrum. Similar characteristics are observed in temperature-dependent gain measurements.

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“…It is caused by inelastic exciton-exciton scattering [5]. The measured peak energy of the P-Band is 3.460 eV at 17 MW/cm 2 .…”

Section: Photoluminescence At High Excitation Levelsmentioning

confidence: 97%

Section: Temperature Dependence Of He-luminescence and Gain Spectramentioning

confidence: 99%

Gain Spectroscopy of HVPE-Grown GaN

Eckey

Holst

Hoffmann

et al. 1997

MRS Internet j. nitride semicond. res.

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“…From the viewpoint of the fundamental physics, highly photoexcited GaN provide us with an excellent stages for studying the excitonic manybody effects in semiconductors [2,3]. The M-line [4,5], P-line [6], and electron-holeplasma (EHP) emissions [2] have been reported. However, the detailed power dependence of the photoluminescence (PL) spectrum and the PL intensity are not clarified.…”

mentioning

confidence: 98%

“…This spectral component around 3.472 eV is attributed to the P-line that originates from the radiative recombination of an exciton associated with the inelastic exciton-exciton scattering. The P 2 -line energy is given by E XA À 3G/4 [6], where E XA and G are the A-exciton energy and the binding energy of the A-exciton, respectively. In GaN films, the P 2 -line energy is estimated to be 3.473 eV, and this energy coincides with the observed energy of the broad emission band.…”

mentioning

confidence: 99%

Excitons and Electron–Hole Plasmas in Highly Excited GaN

Nagai

Inagaki

Kanemitsu

2002

phys. stat. sol. (c)

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We have studied photoluminescence (PL) properties of GaN thin films at low temperatures for various excitation intensities. Under weak excitation intensities, the free exciton line as well as the bound exciton line appear in the PL spectrum. With an increase of the excitation intensity, the M-line and the P-line due to inelastic exciton-exciton interactions are clearly observed. Under strong excitation intensities, electron-hole plasmas (EHP) emission appears at lower energy below the M-line. The radiative recombination processes of highly excited GaN are discussed.Recently, optical properties of wide band-gap semiconductors have extensively been studied. In particular, GaN and III-nitride compounds are promising materials for blue and ultraviolet optoelectronic devices because of their large exciton binding energies (e.g., 28 meV for GaN [1]). From the viewpoint of the fundamental physics, highly photoexcited GaN provide us with an excellent stages for studying the excitonic manybody effects in semiconductors [2,3]. The M-line [4,5], P-line [6], and electron-holeplasma (EHP) emissions [2] have been reported. However, the detailed power dependence of the photoluminescence (PL) spectrum and the PL intensity are not clarified. In this work, we have studied PL spectra of highly excited GaN thin films at a wide range of the laser power (1 nJ/cm 2 to 1 mJ/cm 2 ) and discuss many-body effects of correlated electron and hole systems.All samples used here were fabricated by means of a metal organic chemical vapor deposition (MOCVD) method. 5 mm GaN epitaxial layers were grown on GaN-buffer layers (25 nm) on c-plane (0001) of sapphire substrates. Since the free exciton energy depends on the strain of GaN films in the GaN/sapphire system, the photorefectrance (PR) measurement was carried out to determine the free exciton energy in our samples. For the PR measurements, the reflectance signals were modulated under a 325 nm He-Cd laser beam chopped at 210 Hz and were detected by a Si photodiode with a lock-in amplifier. The PL spectra under weak excitation were measured under a cw He-Cd (325 nm) laser excitation. For the study of the excitation intensity dependence of the PL spectrum, 130 fs and 333 nm laser pulses from optically parametric amplifier (OPA) systems (1 kHz repetition rate) were used as an excitation source and PL signals were dispersed by a 50 cm single-grating monochromator and detected by a liquid-nitrogen cooled charge coupled device (CCD). The beam spot size was carefully determined by a knife-edge method, which allow us to precisely evaluate the energy density of the excitation light. The spatial shape of the excitation laser beam was a Gaussian shape. The incident excitation density was varied from $1 nJ/cm 2 to $1 mJ/cm 2 .

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“…Origin of a stimulated emission in InGaN is still disputed. Two mechanisms are considered [8,9]. The first is due to inelastic exciton/exciton(carrier) scattering, the second relates to electron-hole-plasma (EHP) recombination.…”

Section: Resultsmentioning

confidence: 99%

Influence of n‐type doping on light emission properties of GaN layers and GaN‐based quantum well structures

Godlewski¹,

Ivanov²,

Łusakowska³

et al. 2005

phys. stat. sol. (c)

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Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.

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New emission line in highly excited GaN

Cited by 28 publications

References 9 publications

Gain Spectroscopy of HVPE-Grown GaN

Gain Spectroscopy of HVPE-Grown GaN

Excitons and Electron–Hole Plasmas in Highly Excited GaN

Influence of n‐type doping on light emission properties of GaN layers and GaN‐based quantum well structures

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