New electronic surface states on In-terminated InAs(001)4×2-c(8×2) clean surface

Padova, Paola De; Perfetti, P.; Richter, Christine; Heckmann, O.; Zerrouki, M.; Johnson, Robert L.; Hricovíni, K.

doi:10.1016/s0039-6028(03)00473-4

Cited by 15 publications

(13 citation statements)

References 18 publications

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“…4 shows angular series along the C À J 0 direction from the (4 Â 1)/(1 Â 3) and the (2 Â 6) surfaces. The shape of spectra from the clean InAs(1 0 0) (4 Â 2) agree well with previously published results [13,14]. In the NE-spectrum A 1 and S o are marked.…”

Section: Resultssupporting

confidence: 90%

“…[6]. Earlier studies have shown a surface state in this binding energy region, referred to as n 2 [14]. Bi condensation increases the S n intensity (Fig.…”

Section: Resultsmentioning

confidence: 66%

“…On the Bi/InAs(1 1 0) (1 Â 1) surface, the highest occupied state at binding energy 0.38 eV was identified as the topmost occupied dangling bonds, and in Ref. [14] n 2 was assigned to the topmost occupied structure. It is thus not impossible that the (4 Â 1)/(1 Â 3) surface is terminated with Bi-dangling bonds, even though the emission from this state is located at about 0.2 eV higher binding energy than the emission from the (1 Â 1)-Bi/InAs(1 1 0) dangling bonds.…”

Section: Resultsmentioning

confidence: 99%

“…An example is the indium-rich (4 Â 2)/c(8 Â 2) reconstruction, recently solved by a surface X-ray diffraction (SXDR) study by Kumpf [11] and the arsenic-rich (2 Â 4)-InAs(1 0 0) surface described by the b(2 Â 4) reconstruction (including adsorbed As-dimer in the top layer and another As-dimer in the third layer) [12]. For both surfaces, angle-resolved photoemission studies have revealed several surface states [13,14]. A Bi-induced (2 Â 6)/c(2 Â 12)-Bi/InAs(1 0 0) reconstruction was recently observed above 1 ML Bi coverage, and a structural model was proposed including two layers with dimers [15].…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of bismuth terminated InAs(100)

et al. 2009

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Section: Resultssupporting

confidence: 90%

“…[6]. Earlier studies have shown a surface state in this binding energy region, referred to as n 2 [14]. Bi condensation increases the S n intensity (Fig.…”

Section: Resultsmentioning

confidence: 66%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electronic structure of bismuth terminated InAs(100)

et al. 2009

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“…The density-of-states (DOS) at the surface of InAs bulk was studied in detail, 6,[12][13][14] while reports on NW surface DOS in general, and of InAs in particular, are very limited. The main reason is the nanoscale size, making it extremely difficult to apply conventional methods like photoelectron spectroscopy and capacitance-voltage measurements.…”

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confidence: 99%

Direct measurement of surface states density and energy distribution in individual InAs nanowires

Halpern

Elias

Kretinin

et al. 2012

Applied Physics Letters

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InAs nanowires are candidates for future high-speed electronic and optoelectronic applications due to their high electron mobility and large coherence length. However, InAs surfaces are known to possess a high concentration of donor-type surface states, which results in an electron accumulation layer and, consequently, Fermi level pinning. Since the surface to volume ratio in nanowires is very large, the effect of surface states is greatly enhanced. We present a method for directly determining the density and energy distribution of single nanowire surface states using Kelvin probe force microscopy measured on a nanowire field-effect transistor and interpreted by electrostatic modeling. Here, the method is applied to individual InAs nanowires, which similarly to bulk InAs exhibit a prominent accumulation layer consisting of a large concentration of donor-type surface states. Nevertheless, due to the small diameter of the nanowires, the electron accumulation and Fermi level pinning take place within the entire nanowire. V C 2012 American Institute of Physics.

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Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

Lin

Chang

et al. 2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Recent development of high κ dielectric oxides on (In) GaAs is reviewed in the fields of electronic structure and electric performance; this includes studies of (In) GaAs surfaces with various surface reconstructions, different orientations, and Indium contents, and of high κ/(In) GaAs interfaces. The oxide deposition was carried out using atomic‐layer deposition ( ALD ) and molecular beam epitaxy ( MBE ) via ex‐situ or in‐situ methods. For the former approach, the semiconductor surfaces prior to the oxide deposition were obtained via chemical, arsenic‐cap or annealing treatments. For the latter, the high k's were deposited on pristine freshly MBE ‐grown (In) GaAs surfaces without any treatments. Surface being treated or not clearly determines the quality of the oxide interface which delivers different interfacial electronic structure and electric performance. Without exception, the ex‐situ treated samples show remnant native oxides, which are never found in the in‐situ samples. The electronic structure has been investigated using photoemission measurements, in which the photon energy was provided by X ‐ray and synchrotron radiation. The discussion on high κ/(In) GaAs interfaces has been further extended to the electrical characterization including extraction of interfacial trap densities ( D it 's). Especially, the distinct electrical characteristics of the In 0.2 Ga 0.8 As metal‐oxide‐semiconductor capacitors ( MOSCAPs ) using MBE ‐ Ga 2 O 3 ( Gd 2 O 3 ) and ALD ‐ Al 2 O 3 as the gate are elucidated. Finally, a summary and bench‐marking of the recent advances on enhancement mode III ‐ V (In) GaAs MOSFETs is given, which reveals the great potential of inversion‐channel (In) GaAs MOSFETs for ultimate complementary MOS ( CMOS ) applications.

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New electronic surface states on In-terminated InAs(001)4×2-c(8×2) clean surface

Cited by 15 publications

References 18 publications

Electronic structure of bismuth terminated InAs(100)

Electronic structure of bismuth terminated InAs(100)

Direct measurement of surface states density and energy distribution in individual InAs nanowires

Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

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