New electron optics for mask writer EBM-7000 to challenge hp 32nm generation

Kamikubo, Takashi; Golladay, S. D.; Kendall, Rodney; Katsap, Victor; Ohtoshi, Kenji; Ogasawara, Masataka; Nishimura, Shinsuke; Nishimura, Rieko; Iizuka, Osamu; Nakayama, Takahito; Shinkawa, Shunji; Nishiyama, Tetsurou; Tamamushi, Shuichi

doi:10.1117/12.801725

Cited by 3 publications

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“…Key parameters for EBM6000 and EBM-7000. (11) Figure 4 shows schematics of the objective lenses of EBM-6000 (a) and EBM-7000 (b). In case of EBM-6000, the peak magnetic flux density of the final lens is located well above the writing plane.…”

Section: System Configurationmentioning

confidence: 99%

Electron beam mask writer EBM-7000 for hp 32nm generation

Kamikubo¹,

Ohtoshi²,

Nakayamada³

et al. 2009

SPIE Proceedings

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Optical lithography is facing resolution limit. To overcome this issue, highly complicated patterns with high data volume are being adopted for optical mask fabrications. With this background, new electron beam mask writing system, EBM-7000 is developed to satisfy requirements of hp 32nm generation. Electron optical system with low aberrations is developed to resolve finer patterns like 30nm L/S. In addition, high current density of 200 A/cm 2 is realized to avoid writing time increase. In data path, distributed processing system is newly built to handle large amounts of data efficiently. The data processing speed of 500MB/s, fast enough to process all the necessary data within exposure time in parallel for hp32nm generation, is achieved. And this also makes it possible to handle such large volume dense data as 2G shots/mm 2 local pattern density.In this paper, system configuration of EBM-7000 with accuracy data obtained are presented.

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Section: System Configurationmentioning

confidence: 99%

Electron beam mask writer EBM-7000 for hp 32nm generation

Kamikubo¹,

Ohtoshi²,

Nakayamada³

et al. 2009

SPIE Proceedings

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EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond

Takekoshi¹,

Nakayama²,

Saitô³

et al. 2014

SPIE Proceedings

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Multi-shaped e-beam technology for mask writing

et al. 2010

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Photomask lithography for the 22nm technology node and beyond requires new approaches in equipment as well as mask design. Multi Shaped Beam technology (MSB) for photomask patterning using a matrix of small beamlets instead of just one shaped beam, is a very effective and evolutionary enhancement of the well established Variable Shaped Beam (VSB) technique. Its technical feasibility has been successfully demonstrated [2] . One advantage of MSB is the productivity gain over VSB with decreasing critical dimensions (CDs) and increasing levels of optical proximity correction (OPC) or for inverse lithography technology (ILT) and source mask optimization (SMO) solutions. This makes MSB an attractive alternative to VSB for photomask lithography at future technology nodes.The present paper describes in detail the working principles and advantages of MSB over VSB for photomask applications. MSB integrates the electron optical column, x/y stage and data path into an operational electron beam lithography system. Multi e-beam mask writer specific requirements concerning the computational lithography and their implementation are outlined here. Data preparation of aggressive OPC layouts, shot count reductions over VSB, data path architecture, write time simulation and several aspects of the exposure process sequence are also discussed. Analysis results of both the MSB processing and the write time of full 32nm and 22nm node critical layer mask layouts are presented as an example.

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New electron optics for mask writer EBM-7000 to challenge hp 32nm generation

Cited by 3 publications

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Electron beam mask writer EBM-7000 for hp 32nm generation

Electron beam mask writer EBM-7000 for hp 32nm generation

EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond

Multi-shaped e-beam technology for mask writing

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