2011
DOI: 10.1098/rsta.2011.0156
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New directions in spintronics

Abstract: Conventional microelectronics exploits only the charge degree of freedom of the electron. Bringing the spin degree of freedom to bear on sensing, radio frequency, memory and logic applications opens up new possibilities for 'more than Moore' devices incorporating magnetic components that can couple to an external field, store a bit of data or represent a Boolean state. Moreover, the electron spin is an archetypal two-state quantum system that is an excellent candidate for a solid-state realization of a qubit.

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Cited by 34 publications
(17 citation statements)
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References 66 publications
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“…S pintronics has been successful in the development of magnetic recording and high density magnetic memory devices 1,2 . The next frontier of exploration in this field is the demonstration of gate tunable control of spin currents for spinbased transistor and spin transfer torque based memory applications 3 .…”
mentioning
confidence: 99%
“…S pintronics has been successful in the development of magnetic recording and high density magnetic memory devices 1,2 . The next frontier of exploration in this field is the demonstration of gate tunable control of spin currents for spinbased transistor and spin transfer torque based memory applications 3 .…”
mentioning
confidence: 99%
“…2 For spin-transfer torque magnetic random access memory (STT-MRAM) and magnonic devices, low damping facilitates a lower writing current and longer propagation of spin waves; higher damping is desirable for increasing the reversal rates and the coherent reversal of magnetic elements, as damping suppresses the precessional motion of the magnetization vector. In general, the control of magnetic properties at the micro-and nano-scale is important for technological applications.…”
mentioning
confidence: 99%
“…The magnetism of one-dimensional (1D) systems is not only fascinating from a fundamental perspective but also very promising for technological applications such as recording media, memory devices, and spintronics. 1,2 Consequently, the experimental and theoretical research activities in this field have been most intense over the past years. [2][3][4] One of the properties of central importance in these materials is the magnetic anisotropy energy (MAE) which defines the low-energy orientation of the magnetization M (easy axis) as well as the stability of M with respect to external fields, electric currents, and temperature-induced fluctuations.…”
Section: Introductionmentioning
confidence: 99%