Exchange bias is commonly manifested as the hysteresis-loop shift observed when a ferromagnet is in contact with an antiferromagnet. Here, we report observations of exchange bias with unusual features of a ferromagnet in contact with a spin glass, demonstrating that this is a phenomenon of greater generality. The easily measured properties of the ferromagnet allow access to the internal magnetic degrees of freedom of the glass to which they are coupled. Our results show that a Co/CuMn bilayer system exhibits all the rich phenomena of coercivity enhancement, bias-field shifts and training effects associated with a conventional ferromagnet/antiferromagnet system. Nevertheless, striking differences arise, such as an orientation reversal of the bias field in a small temperature range just below the blocking temperature. We argue that all features can be understood within the context of a random-field model for long-ranged oscillatory Ruderman-Kittel-Kasuya-Yosida (RKKY) coupled spins.
It is accepted that only three elements are ferromagnetic at room temperature, the transition metals iron, cobalt and nickel. The Stoner criterion explains why, for example, iron is ferromagnetic but manganese is not, even though both elements have an unfilled 3d shell and are adjacent in the periodic table: the product of the density of states with the exchange integral must be greater than unity for spontaneous ordering to emerge.1,2 Here, we demonstrate that it is possible to alter the electronic states of nonferromagnetic materials, such as diamagnetic copper and paramagnetic manganese, in 2 order to drive them ferromagnetic at room temperature. This remarkable effect is achieved via interfaces between metallic thin films and C 60 molecular layers. The emergent ferromagnetic state can exist over several layers of the metal before being quenched at large sample thicknesses by the material's bulk properties. While the induced magnetisation is easily measurable by magnetometry, low energy muon spin spectroscopy 3 provides insight into its magnetic distribution by studying the depolarisation process of low energy muons implanted in the sample. This technique indicates localized spin-ordered states at and close to the metallo-molecular interface.Density functional theory simulations suggest a mechanism based on magnetic hardening of the metal atoms due to electron transfer. 4,5 This opens a path for the exploitation of molecular coupling to design magnetic metamaterials using abundant, non-toxic elements such as organic semiconductors. Charge transfer at molecular interfaces can then be used to control spin polarisation or magnetisation, with far reaching consequences in the design of devices for electronic, power or computing applications. 6,7 Multifunctional materials with the spin degree of freedom such as multiferroics, magnetic semiconductors and molecular magnets have all aroused huge interest as potentially transformative components in quantum technologies. [8][9][10][11][12] Strategies used to bring magnetic ordering to these materials typically rely on the inclusion of magnetic transition metals, heavy elements with a large atomic moment or rare earths. In thin film structures, proximity effects and coupling at interfaces play an essential role. 13,14 This is especially the case for molecular spintronics, 15,16 where organic thin films grown on copper have demonstrated spin filtering. 17The organic magnetic coupling can propagate for long distances in systems such as nanoscale vortex-like configurations or nanoskyrmion lattices. 183We choose C 60 as a model molecule due to its structural simplicity and robustness as well as its high electron affinity. C 60 /transition metal complexes exhibit strong interfacial coupling between metal 3d z electrons and molecular π-bonded p electrons. The potential created by the mismatch of molecular and metal work functions leads to a partial filling of the interface states. [19][20][21] Other molecules with close electron affinity and the potential for 3d z /p coupling ...
A study of exchange bias in IrMn/Co systems is presented. Temperature and thickness dependence studies have revealed nonmonotonic behavior in both exchange bias fiel and coercivity with both variables. In particular the exchange bias fiel shows a peak for low IrMn thicknesses that is suppressed at temperatures higher than about 200 K. Calculations using the domain state model of exchange biasing are able to describe all the features seen in the experimental data.
We report on the temperature dependence of the recently discovered spin Hall magnetoresistance in a yttrium iron garnet (YIG)/platinum (Pt) thin film. The YIG/Pt layers are an ideal choice as the combination of an insulating magnetic material and the high spin-orbit interaction in Pt gives a relatively large magnetoresistance and no electrical conduction occurs in the YIG. The temperature dependence of the magnetoresistance was measured between 1.4 K and 280 K from which the temperature dependence of the spin diffusion length in Pt has been extracted. We found that the best agreement between our data and the recently published [Chen et al., Phys. Rev. B 87, 144411 (2013)] theory of the spin Hall magnetoresistance is given by an assumed Elliot-Yafet mechanism of spin relaxation with temperature-independent spin Hall angle and spin mixing conductance. The best estimate for the spin diffusion length returns values between 0.57 and 3.85 nm.
The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. The nanoscale magnetic structure of FeRh epilayers has been studied by polarized neutron reflectometry. Epitaxial films with a nominal thickness of 500 Å were grown on MgO ͑001͒ substrates via molecular-beam epitaxy and capped with 20 Å of MgO. The FeRh films show a clear transition from the antiferromagnetic ͑AF͒ state to the ferromagnetic ͑FM͒ state with increasing temperature. Surprisingly the films possess a FM moment even at a temperature 80 K below the AF-FM transition temperature of the film. We have quantified the magnitude and spatial extent of this FM moment, which is confined to within ϳ60-80 Å of the FeRh near the top and bottom interfaces. These interfacial FM layers account for the unusual effects previously observed in films with thickness Ͻ100 Å. Given the delicate energy balance between the AF and FM ground states we suggest a metastable FM state resides near to the interface within an AF matrix. The length scale over which the FM region resides is consistent with the strained regions of the film.
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