New Current Measurement Procedure Using a Conventional Rogowski Transducer for the Analysis of Switching Transients in Transistors

Oyarbide, E.; Bernal, Carlos; Molina-Gaudo, P.

doi:10.1109/tpel.2016.2624502

Cited by 16 publications

(4 citation statements)

References 10 publications

(11 reference statements)

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“…With the development of fast-switching SiC MOSFET, the use of Rogowski coil for current measurement has become even more attractive, because of its unmatched high bandwidth and simplicity. Reference [57] has demonstrated the idea with a thin flexible Rogowski coil installed conveniently near the SiC MOSFET, as shown in Fig. 26(a).…”

Section: Measuring Current Through Sic Mosfetmentioning

confidence: 99%

A Review of Traditional Helical to Recent Miniaturized Printed Circuit Board Rogowski Coils for Power-Electronic Applications

Shi

Xin

Loh

et al. 2020

IEEE Trans. Power Electron.

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Latest wide-bandgap power devices are switching progressively faster compared with existing silicon devices. Their accurate current measurements for either control or protection have therefore become tougher. One method, that can fulfill the requirements, is to use a Rogowski coil and its accompanied electronics to form a Rogowski current sensor with high bandwidth, small volume, low cost and ease of integration. This paper therefore aims to review various aspects of the Rogowski current sensor from its history, measuring principles to modern power-electronic applications. The applications have, in turn, motivated a progression from traditional helical to recent miniaturized printed-circuit-board (PCB) implementation, in order to improve the overall power density. This progression has similarly been reviewed, together with its various design aspects applied to the winding, integrator, shielding, and parameters of the Rogowski current sensor. Future challenges and directions are then summarized, whose ultimate goal is to maximize accuracy over a wide bandwidth without being affected by radiated and near-field-coupling interferences.

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Section: Measuring Current Through Sic Mosfetmentioning

confidence: 99%

A Review of Traditional Helical to Recent Miniaturized Printed Circuit Board Rogowski Coils for Power-Electronic Applications

Shi

Xin

Loh

et al. 2020

IEEE Trans. Power Electron.

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“…Such voltage spikes caused by the reverse recovery process are typical and frequently observed in soft‐switching CF converters presented recently [32, 46, 47]. Moreover, no signal filtering was used during measurements by means of isolated differential voltage probes and Rogowski coil‐based current sensors that are known for exaggerating oscillations of the measured signals due to capacitive coupling, probe induced ground loops and common mode currents [48, 49]. During the experiments, the voltage spikes were tolerable and no extra damping circuits were used.…”

Section: Experimental Verification and Analysismentioning

confidence: 99%

Bidirectional soft‐switching dc–dc converter for battery energy storage systems

Blinov¹,

Kosenko²,

Chub³

et al. 2018

IET Power Electronics

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The study introduces a bidirectional dc-dc converter with current-and voltage-fed (VF) ports that features soft switching in both buck and boost operating modes. The converter can be used for integration of low-voltage DC sources, such as batteries into a dc bus of considerably higher voltage or a dc link of a grid side inverter. Zero current switching, assisted with the leakage inductance of the isolation transformer, can be achieved at the current-fed side along with zero voltage switching of the VF side, assisted by snubber or intrinsic capacitances of the transistors. Soft switching can be maintained over a wide range of voltage and power levels, regardless of the energy transfer direction. Converter operation is described and theoretical findings were verified with experimental results obtained by means of a 300 W prototype operating at a switching frequency of 100 kHz and designed for integration of a 24 V battery into 400 V dc bus. The converter proposed is compared in terms of efficiency to other competing soft-switching full-bridge topologies implemented with the same components.

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“…Besides, targeting at high-precise measurement, some current probes with different bandwidths are compared in [30]. By using novel structures and optimized designs, some innovative probes with smaller parasitics and higher bandwidth are proposed [31]- [35]. With respect to the parasitics caused by measurement, some general methodologies are proposed for the high-speed and high-precise measurement of SiC device [36]- [39].…”

Section: Introductionmentioning

confidence: 99%

Impedance-Oriented Transient Instability Modeling of SiC mosfet Intruded by Measurement Probes

Zeng

Zhang

Blaabjerg

et al. 2020

IEEE Trans. Power Electron.

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Due to the breakneck switching speed, SiC MOSFET is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC MOSFET, and it poses an unsolved challenge for the industrial field. This paper is targeting to uncover the transient instability mechanism of SiC MOSFET intruded by probes. Mathematical and circuit models of voltage and current probes are created, by considering the parasitics, input impedance, and bandwidth issues. To reveal the stability principles of SiC MOSFET associated with probes, impedance-oriented and heterogeneity-synthesized models combining device with probes are proposed. Furthermore, an assessment methodology and root locus analysis are presented to demonstrate the transient stability schemes and the stable boundaries of SiC MOSFET influenced by multiple factors, including probe parasitics, device parameters, gate resistances, and snubber circuits. Comparative experiments are presented to confirm the transient behaviors of SiC MOSFET intruded by probe parasitics and regulated by control circuits. It is proven that, because of low bandwidth specifications, the large input capacitance of the voltage probe and coil inductance of the current probe degrade the transient stability of SiC MOSFET. Due to the deteriorated stability margin of SiC MOSFET intruded by the inserted parasitics of probes, instability may also be activated by using the small gate resistance. The snubber circuit is helpful to enhance the transient stability. Advanced probes with high bandwidth and high impedance are crucially needed for stable measurement of wide bandgap power devices like SiC MOSFET.

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New Current Measurement Procedure Using a Conventional Rogowski Transducer for the Analysis of Switching Transients in Transistors

Cited by 16 publications

References 10 publications

A Review of Traditional Helical to Recent Miniaturized Printed Circuit Board Rogowski Coils for Power-Electronic Applications

A Review of Traditional Helical to Recent Miniaturized Printed Circuit Board Rogowski Coils for Power-Electronic Applications

Bidirectional soft‐switching dc–dc converter for battery energy storage systems

Impedance-Oriented Transient Instability Modeling of SiC mosfet Intruded by Measurement Probes

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