New CMOS-compatible mechanical shear stress sensor

Sutor, Alexander; Lerch, Reinhard; Hohe, Hans-Peter; Gavesi, M.

doi:10.1109/7361.983475

Cited by 19 publications

(4 citation statements)

References 8 publications

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“…On the contrary the magnetic sensitivity does not depends at all on the orientation of the sensor. As a consequence, when the sensor is rotated by π 2 rad, the sign of V M is inverted while the sign of V H remains constant [26]. Since the roles of the biasing and sensing contacts of a cross-shaped sensor can be inverted, this particular shape allows to take advantage of these properties to remove the parasitic mechanical signal.…”

Section: Offset and Mechanical Sensitivitymentioning

confidence: 99%

Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

Kammerer

Hébrard

Frick

et al. 2006

Eur. Phys. J. Appl. Phys.

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While silicon is not the best semi-conductor material to design Hall effect sensors, it is widely used because Hall devices are fully compatible with standard processes such as CMOS or Bi-CMOS. Hall effect sensors can thus take advantage of on-chip circuitry to counterbalance the poor intrinsic metrological characteristics of silicon Hall devices, and low cost integrated smart magnetometers can be designed using standard technologies. Conventional Hall plate as well as the spinning-current method, which is the present state of the art technique to improve performances of integrated Hall devices, are reviewed in this paper. Then a new multi-strips Hall device and its specific biasing circuit are introduced. This new device allows to multiply by n the absolute sensitivity of the Hall sensor where n is the number of strips, but it suffers from offset. To overcome this drawback, a Hall sensors network which also allows to increase the sensitivity while reducing the offset is proposed. Finally a comparison between the Hall sensors network and the spinning-current is done, showing that both techniques are complementary and should be combined to design high resolution Hall sensor systems.

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Section: Offset and Mechanical Sensitivitymentioning

confidence: 99%

Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

Kammerer

Hébrard

Frick

et al. 2006

Eur. Phys. J. Appl. Phys.

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“…Der Geometriefaktor G wurde eingefçhrt, da Kurzschlusseffekte die Empfindlichkeit des Sensors verringern kaennen, wie in [4] erlåutert wird. Der Geometriefaktor ist stets kleiner eins und kann in folgender Weise berechnet werden [7]:…”

Section: Funktionsprinzip Des Sensorsunclassified

“…Eine hochempfindliche Struktur zur Erfassung von Scherspannungen wurde in [4] vorgestellt. Dort wurde der Sensor als Drehmomentsensor eingesetzt.…”

unclassified

PSpice-Modellierung eines CMOS-kompatiblen mechanischen Spannungssensors, basierend auf der Anisotropie des piezoresistiven Effekts (PSpice-Model for a CMOS-Compatible Stress Sensor Based on the Anisotropy of the Piezoresistive Effect)

Sutor¹,

Lerch²

2001

Teme

Self Cite

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Die Modellierung eines mechanischen Spannungssensors, welcher auf der Anisotropie des piezoresistiven Effekts beruht, wird vorgestellt. Der Sensor wird als Vierpol modelliert, dessen elektrische Eigenschaften unter anderem von mechanischer Spannung, Temperatur und Magnetfeld abhängen. Das Modell kann als Makromodell in PSpice eingebunden werden und so die Entwicklung von Schaltungen zur Signalverarbeitung unterstützen. Die Modellparameter werden durch Messungen verifiziert. Um die Vorteile des Modells zu demonstrieren wird eine Temperaturkompensationsschaltung simuliert und mit Messergebnissen verglichen.

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“…Several piezoresistive and piezoelectric sensors found in the literature [3,4,5] are sensitive to shear and normal stresses from contact loads (although these sensors generally have ranges and sensitivities more suitable for microscopic phenomena) and may be manufactured with current micromachining technology. The proposed sensor pad is an adaptation of this type of design, modified to be slightly larger and able to accommodate higher contact loads.…”

Section: Design Descriptionmentioning

confidence: 99%

A High-Load Stress Sensor for Scoliosis Surgery Application

Benfield

Moussa

Lou

2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)

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The design of a stress sensor for a scoliosis surgery application is presented. Designed specifically for detecting forces and moments placed on spinal hooks and screws used in scoliosis correction, the sensor is less 2mm in the largest dimension and less than 0.5mm in thickness. The operative range is approximately 1000MPa in shear and normal stress directions. Preliminary FEA simulation of a piezoresistive sensor incorporating these design constraints demonstrates that different output signals are produced as the sensor is subjected to shear and normal stresses. When the separate signal patterns from several sensors are combined, the hooks and screws will be able to resolve forces and moments in three dimensions.

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New CMOS-compatible mechanical shear stress sensor

Cited by 19 publications

References 8 publications

Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

PSpice-Modellierung eines CMOS-kompatiblen mechanischen Spannungssensors, basierend auf der Anisotropie des piezoresistiven Effekts (PSpice-Model for a CMOS-Compatible Stress Sensor Based on the Anisotropy of the Piezoresistive Effect)

A High-Load Stress Sensor for Scoliosis Surgery Application

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