New Aqueous Clean for Aluminum Interconnects: Part I. Fundamentals

Rath, D.L.; Ravikumar, R.V.S.S.N.; Delehanty, D.J.; Filippi, R.; Kiewra, E.; Stojakovic, G.; McCullough, K.J.; Miura, Daisuke; Rhoads, Bryan

doi:10.4028/www.scientific.net/ssp.76-77.31

Cited by 8 publications

(6 citation statements)

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“…Fluorine content increased with sample stored in air, likely due to contamination limited to the surface. As described by [5], DSP cleaning of Al RIE residue works…”

Section: A Impact Of Rie and Post Rie Clean To Al Surface Integritymentioning

confidence: 99%

The Impact of AI on Contact Resistance and Its Suitability in Fine Pitch Interconnects

Lie,

Raghavan,

Perfecto

et al. 2024

IMAPSource Proceedings

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Integration issues for a three-dimensional (3D) interconnect in a Face-to-Face (F2F) configuration are discussed. In particular, the effect of AI and organic dielectrics under the bump and their effect in chip-package-interaction (CPI) stresses as well as AI contact resistance issues that arise as the interconnection pitch is decreased. This paper will present a finite-element model created to study the stresses in advanced 3D microelectronic package. To assess the reliability of the 3D packages a submodeling approach is used to capture the CPI stresses. The modeling study presented indicates that it is beneficial to continue using AI pads as it has significatly lower stresses compared to copper pads/vias. In the second portion of the paper, the effect of PBO developer on AI corrosion is presented. Reactive ion etching (RIE) chemistries and wet chemistries were optimized using contact resistance as the success metric. Process robustness was achieved by decoupling the hard dielectric opening from the PBO via opening. Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS) analysis were used to add clarity to the bump contact resistance values.

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“…Fluorine content increased with sample stored in air, likely due to contamination limited to the surface. As described by [5], DSP cleaning of Al RIE residue works…”

Section: A Impact Of Rie and Post Rie Clean To Al Surface Integritymentioning

confidence: 99%

The Impact of AI on Contact Resistance and Its Suitability in Fine Pitch Interconnects

Lie,

Raghavan,

Perfecto

et al. 2024

IMAPSource Proceedings

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“…This mixture would use HF to dissolve any surface TiO x which would expose the bulk TiN to the sulfuric acid and hydrogen peroxide in the solution. Dilute sulfuric peroxide (trade name DSP+) was developed for the removal of organic etch polymer residual after RIE etching of aluminum (4). It contains up to 7% sulfuric acid, up to 7% hydrogen peroxide and 100ppm hydrofluoric acid.…”

Section: Chemistry Selectionmentioning

confidence: 99%

Controlled Lateral Etching of Titanium Nitride in a CMOS Gate Structure Using DSP+

Foster

Metzger²,

Besser³

2013

ECS Trans.

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The metal gate electrode is used in advanced CMOS semiconductor devices to address new requirements including high conductivity to minimize delays due to interconnections between devices and tunable work function to allow n and p-type devices to operate in surface channel mode with minimal gate depletion effects. The introduction of metal elements to the CMOS gate, such as titanium nitride can impose significant changes to the device fabrication process. This includes process chemistry to pattern metallic structures and to remove metallic-containing residues. In this paper we will report the results of titanium nitride recession in the metal gate stack using a dilute mixture of sulfuric acid, hydrogen peroxide and hydrofluoric acid known by the trade name DSP+. This paper demonstrates that DSP+ can recess the TiN into the gate stack more efficiently than oxidation/etch solutions allowing tuning of the gate length and ensuring complete sidewall encapsulation of the gate.

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“…QðiÞ mixin1 CðiÞ metal mixin1 þ QðiÞ mixin2 CðiÞ metal mixin2 ¼ QðiÞ mixout CðiÞ metal mixout (10) where Q(i) mixin1 , Q(i) mixin2 and C(i) metal mixin1 , C(i) metal mixin2 denote, respectively, the flows of the streams entering the i mixer and the corresponding concentrations of each metal in the same streams, and Q(i) mixout and C(i) metal mixout denote the flow of the stream leaving the i mixer and the respective metal concentration, respectively. Split junctions:…”

Section: Superstructure Configurationmentioning

confidence: 99%

“…5 The same graph also shows the percentage of total wet chemicals demand corresponding to hydrogen peroxide. [9][10][11][12][13] Semiconductor Equipment and Materials International (SEMI) is the global industry association serving the manufacturing supply chains for the microelectronic, display, and photovoltaic industries. The likely decrease of relative contribution of hydrogen peroxide is due to alternatives technologies.…”

Section: Introductionmentioning

confidence: 99%

“…7,8 However, hydrogen peroxide has also found new chances in this green revolution of the semiconductor industry. [9][10][11][12][13] Semiconductor Equipment and Materials International (SEMI) is the global industry association serving the manufacturing supply chains for the microelectronic, display, and photovoltaic industries. This association develops the worldwide most respected technical standards in this field.…”

Section: Introductionmentioning

confidence: 99%

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Optimum design of reverse osmosis systems for hydrogen peroxide ultrapurification

2012

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This work is focused on the optimization of a reverse osmosis network proposed for the ultrapurification of chemicals, from technical grade to semiconductor grades demanded in electronic applications that require the use of high‐purity wet chemicals in the semiconductor manufacturing, as it is the case of hydrogen peroxide that is commonly used in the wafer cleaning and surface conditioning processes. An industrial installation able to produce simultaneously the five different Semiconductor Equipment and Materials International Grades of hydrogen peroxide is represented by a simplified superstructure configuration formulated as a nonlinear programming problem. The network integrates reverse osmosis membrane modules, mixers, and split functions, defined by the equations of mass balances and the Kedem–Katchalsky transport model for the description of the permeate flux and the metal rejection coefficients at each membrane stage. The objective of the design is to maximize the daily profit obtained from the sale of the electronic grades of hydrogen peroxide produced by the ultrapurification system. © 2012 American Institute of Chemical Engineers AIChE J, 2012

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New Aqueous Clean for Aluminum Interconnects: Part I. Fundamentals

Cited by 8 publications

References 0 publications

The Impact of AI on Contact Resistance and Its Suitability in Fine Pitch Interconnects

The Impact of AI on Contact Resistance and Its Suitability in Fine Pitch Interconnects

Controlled Lateral Etching of Titanium Nitride in a CMOS Gate Structure Using DSP+

Optimum design of reverse osmosis systems for hydrogen peroxide ultrapurification

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