New approach to the atomic layer epitaxy of GaAs using a fast gas stream

Abstract

A new growth method has been developed for the atomic layer epitaxy of GaAs. The gas system was based on a conventional metalorganic vapor phase epitaxial system but the decomposition of methylgallium was suppressed in the stagnant layer by using a fast pulsed gas stream from a jet nozzle. The method enabled us to grow high purity epitaxial layers with a clear self-limiting mechanism even at 560 °C. The variations in the growth rate with respect to various growth parameters were explained by the rate equations based on the selective adsorption of methylgallium on surface As atoms. The decomposition rate of methylgallium on the surface had an activation energy of 42 kcal/mole from 440 to 560 °C.

A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy

“…We have developed an ALE method (pulsed-jetepitaxy: PJE) for III-V compounds, based on a vapor-phase system using metalorganic compounds and hydride [8]. PJE has enabled us to grow homoepitaxial layers of III-V compounds with an ideal self-limiting mechanism.…”

Atomic layer epitaxy of MnAs on GaAs(001)

“…A rate equation is useful for the analysis of the growth mechanism in ALE [6,7]. Let 1/t s be the arrival rate of (MeCp) 2 Mn molecule on the growing surface.…”

“…The carrier gas was hydrogen. The pulsed-jet-epitaxy (PJE) was used in the ALE [7]. The PJE reactor had a chimney-type structure where the carrier gas and reactants were introduced from the bottom and exhausted through the top by high capacity vacuum pumps.…”

Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD

“…7 The SPA method is especially successful in investigating monolayer (ML) growth of compound semiconductors because of its high sensitivity to reflectivity changes on surfaces covered with different chemicals. Many studies of monolayer growth at temperatures ranging as high as 700°C have been reported using various methods, [8][9][10][11] however most of the SPA studies of GaAs growth have been reported at temperatures below 500°C on GaAs substrates. 5,6,[12][13][14][15][16][17] In this work, we report an SPA study of MOCVD GaAs monolayer epitaxy by interrupted growth at 650°C, which is the highest temperature studied so far by SPA to our knowledge.…”