A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy

Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates

“…3(a), both the growth rate and the In mole fraction increase significantly with MO precursor exposure time. Saturation of the growth rate or composition latching is not observed, which is different from the results reported by other groups [22,23]. Further increase in the MO precursor exposure time leads to a hazy material surface, which is attributed to the In segregation or large lattice mismatch.…”

“…2 and 3, it can be suggested that during the ALE growth of InGaAs at 500 1C for given input flow rates, the incorporation of In in a growth cycle is mainly dependent on the TMIn supply duration and the incorporation of Ga is mainly dependent on the AsH 3 exposure duration. Growth kinetics of GaAs and InAs in ALE has been studied in detail in the literature, and there is no fundamental difference in the growth mechanisms of these two materials [1,2,12,18,23]. In principle, ALE is a completely thermally driven process.…”

“…However, the growth behavior of In x Ga 1À x As (x In $ 0.53) lattice-matched to InP by ALE have not been fully explored as compared to the well-documented GaAs-based materials [1,22,23]. In this paper, we present a systematic study of the dependence of the growth rate and alloy composition of InGaAs on the source exposure and growth temperature in ALE with metalorganic and hydride precursors.…”

Atomic layer epitaxy of MnAs on GaAs(001)

“…The self-limiting growth in ALE is based on the layer-bylayer growth [10]. The self-limiting mechanism is only possible for a specific chemical reaction between the surface and the source molecule.…”

“…Ozeki et al [10] reported that, in GaAs ALE using trimethylgallium (TMGa) and TDMAAs sources, the growth rate of GaAs layer was just one monolayer/cycle and TDMAAs decomposed on the growing surface at 500 1C. This suggests that the TDMAAs molecule on manganese stabilized surface decomposed into arsenic atom and the surface changed from manganese stabilized surface to the arsenic stabilized surface.…”