New advancements in 793 nm fiber-coupled modules for Th fiber laser pumping, including packages optimized for low SWaP applications

Ebert, Chris; Guiney, Tina; Irwin, David; Patterson, Steve

doi:10.1117/12.2223127

Cited by 2 publications

(2 citation statements)

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“…The maximum intensity of thulium's absorption peak is near 792 nm and its line width is 20 nm, and using a 792 nm semiconductor laser to pump a thulium-doped fiber laser has the highest pumping efficiency. The 792 nm semiconductor laser chips and fiber−coupled semiconductor laser modules with high power, high efficiency and high reliability are the core components of many mid-infrared devices such as a mid-infrared laser electro-optical countermeasure system, which has received extensive attention in the world [6,7].…”

Section: Introductionmentioning

confidence: 99%

High–Power 792 nm Fiber–Coupled Semiconductor Laser

Liu,

Sun,

Sun

et al. 2023

Photonics

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The pumping of Tm-doped crystal or fiber by a 792 nm semiconductor laser is an important way to generate a mid-infrared laser, which is widely used in various fields. In this paper, a high–power 792 nm fiber–coupled semiconductor laser module was successfully fabricated with the output power of 232 W at a 10 A continuous current and the electro-optic conversion efficiency of 48.6%. The laser module is coupled with 24 chips into a fiber by spatial multiplexing and polarization combination technology. For a single emitting laser chip, the continuous wave (CW) output power and threshold current are 10.45 W at 10 A and 1.55 A, respectively. A polarization as high as 94% can also be realized, which is more suitable for laser spatial beam combining. The laser module was aged for more than 4000 h at 12 A and 25 °C without obvious power degradation.

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Section: Introductionmentioning

confidence: 99%

High–Power 792 nm Fiber–Coupled Semiconductor Laser

Liu,

Sun,

Sun

et al. 2023

Photonics

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“…There are other differences such as the pump polarization, so that more careful investigation is necessary. However, a yield of >1 may be possible due to a carrier multiplication effect, as has been studied extensively for possible photovoltaic applications and is also observed for 793 nm pumping of Tm:fiber [23]. It is known that the relaxation dynamics in Ti:sapphire creates a gain bottleneck for pulses in the ~10 ps range, so that a hot ground-state excitation distribution could result in absorption of 450 nm light into states high enough in the excited state band to relax to the bottom of the excited state level through an Auger-type process [24] (this process would actually cool the crystal as-well).…”

Section: Fluorescence Behaviormentioning

confidence: 99%

Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

et al. 2017

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Abstract:We report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-μJ energies with a repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as the solutions to these challenges. S. Schilt, and T. Südmeyer, "Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power," Opt.

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New advancements in 793 nm fiber-coupled modules for Th fiber laser pumping, including packages optimized for low SWaP applications

Cited by 2 publications

References 0 publications

High–Power 792 nm Fiber–Coupled Semiconductor Laser

High–Power 792 nm Fiber–Coupled Semiconductor Laser

Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

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