Neutron irradiation effects in AlGaN/GaN heterojunctions

Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

“…Activation energy of electron traps created by neutron bombardment is in the range of 0.21-1.0 eV which is dependent on neutron irradiation dose (10 À 14 -10 À 17 cm À 2 ) and epitaxial structure [14][15][16]. Trapped electrons can be excited back to the conduction band with optical activation at room temperature.…”

Influence of Thermal and Fast Neutron Irradiation on dc Electrical Performances of AlGaN/GaN Transistors

“…Manuscript As these GaN-based devices are intended to be used in military, nuclear industry, and space applications [3], it is imperative to study their electrical and microwave behaviors in extreme conditions. In fact some of these applications require the device to remain operable after irradiation with high doses of electrons, protons, neutrons or gamma rays [4]. In this paper, we were interested in the impact of neutron irradiation on electrical characteristics of AlGaN/GaN HEMTs.…”

“…Usually, the majority of papers reported in the literature relates to studies about fast neutron radiation effects on the electrical properties of AlGaN/GaN transistors. In fact Polyakov et al have shown that the mobility and sheet conductivity start to decrease only after a fast neutron fluence superior to [4]. The impacts on the carriers mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of AlGaN/GaN structures while there are only slight changes in the two-dimensional electron concentration [4].…”

“…In fact Polyakov et al have shown that the mobility and sheet conductivity start to decrease only after a fast neutron fluence superior to [4]. The impacts on the carriers mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of AlGaN/GaN structures while there are only slight changes in the two-dimensional electron concentration [4]. This paper shows that neutron irradiation introduces electron traps with activation energies of 0.35 and 0.45 eV in AlGaN barrier and hole traps with activation energies of 0.26, 0.6 and 1 eV either in the GaN buffer or in the AlGaN barrier [4].…”

“…The impacts on the carriers mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of AlGaN/GaN structures while there are only slight changes in the two-dimensional electron concentration [4]. This paper shows that neutron irradiation introduces electron traps with activation energies of 0.35 and 0.45 eV in AlGaN barrier and hole traps with activation energies of 0.26, 0.6 and 1 eV either in the GaN buffer or in the AlGaN barrier [4]. Zhang et al have reported that the sheet carrier density remains stable after a neutron irradiation with a fluence of [5].…”