Neutron induced defects in silicon detectors characterized by DLTS and TSC methods

Fretwurst, E.; Dehn, C.; Feick, H.; Heydarpoor, P.; Lindström, G.; Moll, M.; Schütze, C.; Schulz, T.

doi:10.1016/0168-9002(95)01405-5

Cited by 23 publications

(3 citation statements)

References 19 publications

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“…Based on the literature [13,14,15,16,17,18,19,20,21], the trap densities introduced by 1 MeV neutrons and 10 MeV electrons have been estimated with two established assumptions: the electron trap density is a linear function of dose, and the dose is a linear function of fluence. A summary is given in Table 2.…”

Section: Simulatormentioning

confidence: 99%

Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD

Sopczak

Bekhouche

Bowdery

et al. 2007

IEEE Trans. Nucl. Sci.

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Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. The work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project. Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. The work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project.

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Section: Simulatormentioning

confidence: 99%

Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD

Sopczak

Bekhouche

Bowdery

et al. 2007

IEEE Trans. Nucl. Sci.

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“…Here, n and p represent the capture cross-sections for electrons and holes, respectively, and represents the introduction rate. There is indeed a fair agreement between most authors (see, e.g., [8]) on these parameters; the deep-acceptor level is assumed to be related with the divacancy VV(-/0) complex, whereas the deep-donor level is attributed to the C i O i complex.…”

Section: B Radiation Damagementioning

confidence: 59%

“…Deep-level traps induced by the radiation are described by means of a generalized Shockley-Read-Hall statistic [7]: user-definable parameters include position of the energy levels and their relative capture cross-sections. Such parameters, in turn, can be experimentally characterized by means of DLTS, TSC or TCT techniques [8], [9]. Both acceptor and donors levels can be considered, and arbitrary defect-concentrations can be assigned to each level: such concentrations can be, in turn, directly correlated to the particle fluence experienced by the detector.…”

Section: B Radiation Damagementioning

confidence: 99%

A comprehensive analysis of low-resistivity silicon radiation detectors

Passeri

Bilei

Ciampolini

1999

IEEE Trans. Nucl. Sci.

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Low-resistivity materials have been proposed for the fabrication of radiation-hard solid-state particle detectors. A complete analysis of low-resistivity detector performance, including the estimate of charge collection efficiency, has been carried out by using a numerical device simulator, and compared with results expected from conventional, high-resistivity devices. By exploiting the features of the CAD environment, characterization of devices over a wide range of fluences and applied biases has been possible, avoiding the actual fabrication of prototypes, as well as lengthy and expensive testing procedures. Encouraging results have been obtained: low-resistivity devices appear to provide some definite advantages in terms of long-term performance optimization.

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Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors

Himmerlich

Nuria

Rivera

et al. 2023

Nuclear Instruments and Methods in Physics Research Section A:

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Neutron induced defects in silicon detectors characterized by DLTS and TSC methods

Cited by 23 publications

References 19 publications

Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD

Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD

A comprehensive analysis of low-resistivity silicon radiation detectors

Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors

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