Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD

Sopczak, A.; Bekhouche, Khaled; Bowdery, C.; Damerell, Chris; Davies, Gavin; Dehimi, L.; Greenshaw, T.; Stefanov, Konstantin D.; Walder, J.-P.; Woolliscroft, Tim; Worm, S. D.

doi:10.1109/tns.2007.903180

Cited by 13 publications

(13 citation statements)

References 19 publications

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“…Figure 6 compares the full TCAD simulation for 0.17 eV traps and clocking frequency of 50 MHz to the analytic model. It emphasises the good agreement between the model and full simulations 1 . The variation of hit occupancy is studied and as expected at lower temperatures larger hit occupancy leads to lower CTI values as traps are filled to a higher level.…”

Section: Comparisons With An Analytic Modelmentioning

confidence: 67%

“…This might then allow predictions of CTI for other CCD geometries without requiring a full simulation. A simple analytic model [1] has been adapted to the CPCCD characteristics. The analytic model gives very similar results as shown in Figs.…”

Section: Comparisons With An Analytic Modelmentioning

confidence: 99%

“…They could relate to a breakdown of the assumptions at high temperatures, to ignoring the precise form of the clock voltage waveform, or to ignoring the pixel edge effects. 1 For temperatures below 140K the full simulation does not converge. V. CONCLUSIONS AND OUTLOOK The Charge Transfer Inefficiency (CTI) of a CCD with high-speed column parallel readout has been studied with a full simulation (ISE-TCAD DESSIS) and compared with an analytic model.…”

Section: Comparisons With An Analytic Modelmentioning

confidence: 99%

“…For CCD devices containing many pixels, CTI values around 10 −5 are important. Previous results for a CCD with sequential readout have recently been reported [1]. The expected background rate at the future ILC near the interaction point leads to radiation damage in the CCD detector.…”

Section: Introductionmentioning

confidence: 96%

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Radiation hardness studies in a CCD with high-speed column parallel readout

et al. 2008

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Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of the International Linear Collider (ILC). The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. The results of detailed simulations of the charge transfer inefficiency (CTI) of a prototype CPCCD are reported and studies of the influence of gate voltage on the CTI described. The effects of bulk radiation damage on the CTI of a CPCCD are studied by simulating the effects of two electron trap levels, 0.17 and 0.44 eV, at different concentrations and operating temperatures. The dependence of the CTI on different occupancy levels (percentage of hit pixels) and readout frequencies is also studied. The optimal operating temperature for the CPCCD, where the effects of the charge trapping are at a minimum, is found to be about 230 K for the range of readout speeds proposed for the ILC. The results of the full simulation have been compared with a simple analytic model.

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Section: Comparisons With An Analytic Modelmentioning

confidence: 67%

Section: Comparisons With An Analytic Modelmentioning

confidence: 99%

Section: Comparisons With An Analytic Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

See 2 more Smart Citations

Radiation hardness studies in a CCD with high-speed column parallel readout

et al. 2008

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“…Simulation and modelling of CCD radiation hardness effects for a CCD prototype with sequential readout was reported at IEEE'2005 [12], comparing full TCAD simulations with analytic models was reported at IEEE'2006 [13] and in Ref. [14], simulation and modelling of a CCD prototype with column parallel readout (CPCCD) at IEEE'2007 [15] and in Ref. [16].…”

Section: Introductionmentioning

confidence: 99%

Measurements of Charge Transfer Inefficiency in a CCD With High-Speed Column Parallel Readout

Sopczak

Bekhouche

Damerell

et al. 2009

IEEE Trans. Nucl. Sci.

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Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. A test stand for measuring the charge transfer inefficiency (CTI) of a prototype CPCCD has been set up. Studies of the CTI have been performed at a range of readout frequencies and operating temperatures. Abstract-Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying shortlived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. A test stand for measuring the charge transfer inefficiency (CTI) of a prototype CPCCD has been set up. Studies of the CTI have been performed at a range of readout frequencies and operating temperatures.

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