Neutral oxygen-vacancy defect in cubic boron nitride: A plausible qubit candidate

Abstract

Experimental feasibility of potential quantum sensing and computing applications based on the oxygen-vacancy defect (VBON center) in cubic boron nitride (c-BN) is theoretically predicted by means of first-principles calculations. The proposed VBON center consisting of a boron vacancy (VB) and an adjacent substitutional oxygen (ON) is a plausible qubit candidate, which is isoelectronic to the NV− center in diamond. We found that the neutral paramagnetic VBON center is spin-triplet and exists mainly in p-type c-BN. The results demonstrate that the zero-field splitting of the neutral VBON center in the ground state falls within the microwave range and has a value of approximately 2980 MHz. Furthermore, the neutral VBON center hyperfine interactions in the ground state are determined to be in the tens of MHz. It is anticipated that our results will pave the way for the neutral VBON center acting as a scalable platform for implementing quantum information processing, sensing, and beyond.

Identification of the phosphorus-doping defect in MgS as a potential qubit

“…The value of D is obviously in the range of MW, and in fair agreement with the theoretical data 2980 MHz of the V B O N center in c-BN crystal. [16] However, the value of E is ten orders of magnitude smaller than D. We note that the E is not zero, perhaps because the P +1 S point defect is not strict C 3v symmetric. We expect that our D can be confirmed by the optically detected magnetic resonance (ODMR) in the future, which is considered to be the core parameter for preparing superposition states in the quantum manipulation process.…”

“…[4] However, the preparation process of NV − color center in diamond is still challenging because of the requirements of high concentration and controllable position. [14][15][16] Therefore, it is necessary to find other potential qubits to apply in the quantum systems. So far, many candidates have been proposed, such as negatively charged Si vacancy (V − Si ), [17,18] neutral carbon-silicon double vacancy (V C V Si ), [19,20] and negatively charged NV color center (N C V − Si ) [21] in SiC, the neutral V Al O N in wurtzite AlN, [22] the neutral V Ga O N in GaN, [23] etc.…”

Recent progress in emergent two-dimensional silicene

“…Silicene is potentially very useful for applications including electronics, energy storage devices, sensors, catalysts, electrode materials, and topological quantum sensing technology as well. 121,122 Moreover, silicene-based heterojunctions have plenty of promising applications not limited to the aforementioned cases as silicene is an ideal channel material with prominent characteristics, such as a tuneable band gap and compatibility with the ubiquitous semiconductor industry. 96 Multilayer silicene fabricated by the topochemical method exhibits high coulombic efficiency and excellent rate capability, which accounts for its mass production and overshadows its potential applications.…”

Symmetry‐Protected Two‐Level System in the H3 Center Enabled by a Spin–Photon Interface: A Competitive Qubit Candidate for the NISQ Technology

“…Considerable progress has been made in this direction in recent years. [3,4] Following these criteria and guidance, aside from the NV center, several other defects have been reported, such as the V B O N center in cubic boron nitride (c-BN), [22] Si vacancy in 4H silicon carbide, [23] and group-IV defects in diamond. [24] Most of these color centers have been developed for use in wide-bandgap semiconductors.…”