Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM

Buckwell, M; Ng, Wing H.; Mannion, Daniel J.; Cox, Horatio R. J.; Hudziak, S; Mehonić, Adnan; Kenyon, Anthony J.

doi:10.3389/fnano.2021.699037

Cited by 5 publications

(4 citation statements)

References 59 publications

(81 reference statements)

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“…Also, the loop area of the positive half cycle of the whole hysteresis measurement (Reset switching) is lower than the second half cycle (Set switching). This result has been attributed to the absorption of oxygen ions by the electrochemically active molybdenum electrode [74]. After seven cycle measurements, the SET voltage is more stable with respect to the RESET voltage.…”

Section: Electrical Characterization and Modellingmentioning

confidence: 82%

Fabrication and characterization of TiOx based single-cell memristive devices

Özkal,

Kazan,

Karataş

et al. 2023

Mater. Res. Express

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Nowadays, remarkable progress has been observed in research into neuromorphic computing systems inspired by the human brain. A memristive device can behaviorally imitate the biological neuronal synapse therefore memristor-based neuromorphic computing systems have been proposed in recent studies. In this study, the memristive behaviors of titanium dioxide sandwiched between two platinum electrodes were investigated. For this purpose, three SiO2/Pt/TiOx/Pt thin films with 7.2 nm, 40 nm, and 80 nm TiOx metal-oxide layers were fabricated using a pulsed laser deposition technique. The fabrication process, structural properties, photoluminescence properties and electrical transport characterization of each thin film have been investigated. All thin films were analyzed in terms of the film stoichiometry and degree of oxidation using high-resolution x-ray photoelectron spectroscopy. By measuring the layer thickness, density, and surface roughness with the x-ray reflectivity technique, by analyzing the structural defects with photoluminescence spectroscopy and by characterizing the quasi-static electrical properties with the conventional two probes technique, we have shown that the fabricated memristive devices have bipolar digital switching properties with high ROFF/RON ratio. This type of switching behavior is applicable in random access memories. Experimental current–voltage behavior in the form of pinched hysteresis loop of the films have been modelled with generalized memristor model.

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Section: Electrical Characterization and Modellingmentioning

confidence: 82%

Fabrication and characterization of TiOx based single-cell memristive devices

Özkal,

Kazan,

Karataş

et al. 2023

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

“…Resistive switching or forming in silicon suboxide was found to be an intrinsic property of the suboxide. It has been proposed that the switching mechanism is driven by competing field-driven formation, and current-driven switch-off the conductive filament 30 , 33 , 34 . The switchable conductive pathway was demonstrated to be due to trap assisted tunneling through silicon nanocrystals embedded within the oxide layer.…”

Section: Experimental Methodsmentioning

confidence: 99%

Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface

Kalem

2024

Sci Rep

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The silicon suboxide SiOx (x < 2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance silicon oxide materials are required for an appropriate operation of any electronic gadget. In this work, we report on the physical and electrical properties of a suboxide layer of up to 1 μm, which was grown on silicon during the formation of a dielectric layer, namely the ammonium silicon hexafluoride. It is a stable oxide exhibiting light emission from 400 to 1700 nm offering scalable and cost-effective large area processing capability. The measurement results reveal interesting properties, which are required to be understood clearly before proceeding with any suitable application. The results have been analyzed using state-of-the-art physical and electrical characterization techniques such as ellipsometry, AFM, SEM, FTIR, photoluminescence lifetime and resistive switching measurements to determine structural, optical and electrical properties. At 300 K the carrier lifetime measurements reveal the lifetime values ranging from about few tens of picosecond up to 4500 picoseconds. Scanning probe analysis indicate a surface roughness of about 30 Å. Resistive memory forming was observed also in these layers at relatively low power thresholds. We provide a comprehensive description of the physical and electrical properties in order to clarify the origin of the observed features. The wavelength dependent real $${\varepsilon }_{1}(\omega )$$ ε 1 ( ω ) and the imaginary $${\varepsilon }_{2}\left(\omega \right)$$ ε 2 ω dielectric functions provided useful insights on optical properties. A lookout is given for the possible applications of this special SiOx dielectric oxide layer.

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“…Resistive switching or forming in silicon suboxide was found to be an intrinsic property of the suboxide. It has been proposed that the switching mechanism is driven by competing field-driven formation, and current-driven switch-off the conductive filament [6,7]. The switchable conductive pathway was demonstrated to be due to trap assisted tunneling through silicon nanocrystals embedded within the seed layer.…”

Section: Resistive Switching Propertiesmentioning

confidence: 99%

Physical and electrical characterization of a silicon suboxide seed layer

Kalem

2023

Oxide-Based Materials and Devices XIV

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The silicon suboxide SiOx (x<2.0) offers promising application possibilities ranging from electrodes in lithium-ion batteries used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance oxide materials are required for an appropriate operation of any electronic gadget. In this work, we report on the physical and electrical properties of a suboxide formed as a seed layer during the formation of a dielectric layer, namely the ammonium silicon hexafluoride. The measurement results reveal interesting properties, which are required to be understood clearly before any application. The results have been analyzed using state-of-the-art techniques and compared with the developments of SiOx obtained by related techniques. In this presentation, a comprehensive review of the physical and electrical properties is given in order to clarify the origin of the observed features. At the end of the paper, a lookout is provided for the possible applications of this special SiOx dielectric seed layer.

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Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM

Cited by 5 publications

References 59 publications

Fabrication and characterization of TiOx based single-cell memristive devices

Fabrication and characterization of TiOx based single-cell memristive devices

Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface

Physical and electrical characterization of a silicon suboxide seed layer

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