1959
DOI: 10.1103/physrev.115.537
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Nernst and Ettingshausen Effects in Germanium between 300 and 750°K

Abstract: The Nernst and Ettingshausen effects in germanium single crystals of different conductivity type and with various impurity densities have been measured between 300 and 750°K in magnetic fields of 9000 gauss; the Nernst effect also at 2100 gauss. The experimental results are compared with theoretical expressions for the Nernst and Ettingshausen coefficients and with previously reported values for the thermal conductivity, which links the two effects through the Bridgman relationship. The qualitative agreement i… Show more

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Cited by 27 publications
(7 citation statements)
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“…The outcomes show that the EC decreases sharply in the range 200 230 KK  and the same in the range 230 K  . This result is the same with the empirical results for the EC in p -type germanium with resistivities 30 ohm cm  studied in [10]. Comparing to EC in the quantum well [11], the EC in CSSL is larger than that in the quantum well.…”
Section: Numerical Results and Discussionsupporting
confidence: 88%
“…The outcomes show that the EC decreases sharply in the range 200 230 KK  and the same in the range 230 K  . This result is the same with the empirical results for the EC in p -type germanium with resistivities 30 ohm cm  studied in [10]. Comparing to EC in the quantum well [11], the EC in CSSL is larger than that in the quantum well.…”
Section: Numerical Results and Discussionsupporting
confidence: 88%
“…Although ONE in semiconductors and semimetals exhibit a substantially large transverse thermopower, it has not been applied in practice because its operation requires large magnetic fields. [5][6][7][8] In contrast, in magnetic materials with spontaneous magnetization, the Nernst effect appears even in the absence of magnetic fields owing to the spin-orbit interaction, which is called the anomalous Nernst effect (ANE) [Fig. 1(c)].…”
mentioning
confidence: 99%
“…Its origin is the extraordinarily high mobility of electrons and low Fermi energy (Behnia, 2009). In addition, a large Nernst coefficient has also been reported using other high-carrier mobility materials such as InSb (À82 mV K À1 T À1 at 283 K) (Nakamura et al, 1997), Ge (320 mV K À1 T À1 at 360 K) (Mette et al, 1959), and Cd 3 As 2 (107 mV K À1 T À1 at 250 K) (Xiang et al, 2020). However, a thermoelectric module using these materials operating with the Nernst effect has not been reported.…”
Section: Introductionmentioning
confidence: 88%