NEP and responsivity of THz zero-bias Schottky diode detectors

Hesler, Jeffrey L.; Crowe, T.W.

doi:10.1109/icimw.2007.4516758

Cited by 85 publications

(72 citation statements)

References 2 publications

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“…Its value was determined by a linear fitting of the rectified output voltage as a function of the input HF power, shown in Fig. 4(a), and had an absolute value of approximately 1.9 kV/W at a frequency of 1 GHz, comparable to state-of-theart Schottky-diode detectors [18]. The frequency response of the diode, measured up to 3 GHz, is shown in Fig.…”

Section: B High Frequency Ac Measurementmentioning

confidence: 99%

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An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Etor

Dodd

Wood

et al. 2016

IEEE Trans. Electron Devices

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Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) <1  Abstract-The design and fabrication metal-insulator-metal (MIM) diodes using an ultra-thin organic insulator is presented. The insulating layer was found to be compact, highly conformal, and uniform, effectively overcoming the main design challenge in MIM diodes. The diodes have strong non-linear current-voltage characteristics with a typical zero-bias curvature coefficient 5.4 V -1 and a voltage responsivity of 1.9 kV/W at a frequency of 1 GHz. The fabrication of the diodes only requires lowtemperature processing, is cost effective, and can potentially be ported to large-area roll-to-roll manufacturing.Index Terms-Metal-insulator-metal diodes, microwave diode, molecular electronics, octadecyltrichlorosilane.

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Section: B High Frequency Ac Measurementmentioning

confidence: 99%

“…All measurements were carried at room temperature, and the input HF power compensated at different frequencies to account for the measured losses in the cables, probes and coplanar waveguides. The diode voltage responsivity R V is defined as [17]:…”

Section: B High Frequency Ac Measurementmentioning

confidence: 99%

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Etor

Dodd

Wood

et al. 2016

IEEE Trans. Electron Devices

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“…6 (a)) using Schottky-barrier diodes (SBDs) or bolometers is the most widely used technique for the detection of amplitude or power of THz electromagnetic waves. The cutoff frequency of the SBD can be made more than 10 THz with GaAs materials [22,23], and 1.5 THz with 130-nm CMOS [24]. Heterodyne detection with the SBD mixer and a local oscillator (LO) signal source ( Fig.…”

Section: Overview Of Detectorsmentioning

confidence: 99%

Terahertz technologies: present and future

Nagatsuma

2011

IEICE Electron. Express

184

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A number of technical breakthroughs in electronics and photonics made since the early 1990s have started to bring terahertz (THz)-wave technologies from laboratory demonstrators to industrial applications such as non-destructive testing, security, medicine, communications, etc. This paper overviews the latest progress in THz-wave technologies in terms of components such as sources and detectors, and system applications, and discusses future challenges towards market developments. Keywords: terahertz, source, detector, spectroscopy, imaging, communication Classification: Fiber optics, Microwave photonics, Optical interconnection, Photonic signal processing, Photonic integration and systems References[1] D. Grischkowsky, S. Keiding, M. van Exter, and Ch. Fattinger, "Farinfrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors,"

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“…1(b) have been used to implement the mm-wave imaging detector traditionally. For example, Excellent NEP performance for III-V semiconductor SBD has been reported in [6] (20 pW/Hz at 800 GHz). A Shallow Trench Separated (STS) Schottky barrier diode with 1.5 THz cut-off frequency can be fabricated in 130 nm digital CMOS [7].…”

Section: Introductionmentioning

confidence: 96%

A high-sensitivity 135GHz millimeter-wave imager by compact split-ring-resonator in 65-nm CMOS

Yang

et al. 2015

Solid-State Electronics

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NEP and responsivity of THz zero-bias Schottky diode detectors

Cited by 85 publications

References 2 publications

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Terahertz technologies: present and future

A high-sensitivity 135GHz millimeter-wave imager by compact split-ring-resonator in 65-nm CMOS

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