Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

Gunning, Brendan P.; Lowder, J.E.; Moseley, Michael William; Doolittle, W. Alan

doi:10.1063/1.4747466

Cited by 74 publications

(50 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, as-prepared p-type ZnO usually shows poor conductivity and easily transforms into n-type conduction after several days or weeks. The only successful case is Mg-doped GaN exhibiting a stable p-type conduction, yet limited to epitaxial materials and a poor conductivity of ∼5 S/cm (5,6). Hence, the search for high-performance p-type TCs has been a major challenge in recent decades.…”

mentioning

confidence: 99%

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

Yang

Kneiβ

Lorenz

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

202

234

View full text Add to dashboard Cite

A degenerate p-type conduction of cuprous iodide (CuI) thin films is achieved at the iodine-rich growth condition, allowing for the record high room-temperature conductivity of ∼156 S/cm for asdeposited CuI and ∼283 S/cm for I-doped CuI. At the same time, the films appear clear and exhibit a high transmission of 60-85% in the visible spectral range. The realization of such simultaneously high conductivity and transparency boosts the figure of merit of a p-type TC: its value jumps from ∼200 to ∼17,000 MΩ −1 . Polycrystalline CuI thin films were deposited at room temperature by reactive sputtering. Their electrical and optical properties are examined relative to other p-type transparent conductors. The transport properties of CuI thin films were investigated by temperature-dependent conductivity measurements, which reveal a semiconductor-metal transition depending on the iodine/argon ratio in the sputtering gas.copper iodide thin film | p-type transparent conductor | figure of merit | reactive sputtering | room-temperature growth

show abstract

mentioning

confidence: 99%

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

Yang

Kneiβ

Lorenz

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

202

234

View full text Add to dashboard Cite

show abstract

“…Similar hole freeze-in behavior at low temperatures has also been observed in many previous reports. 35,39,45 Unfortunately, most earlier observations of this effect are not discussed in detail or are simply attributed to donor compensation. They argue that, as the thermally activated acceptors freeze out with decreasing temperature, compensating donors begin to have more effect on the conduction.…”

Section: New Strategy Based On Band-engineeringmentioning

confidence: 99%

“…Alternatively, in this work we offer the above qualitative band-diagram to explain the idea of resonant state p-type doping. In the case of considerable acceptor density, these impurity states are broadened, [35][36][37][38] which can further enhance the coupling between them. In this new scenario, electrons are able to drop from the VBM of GaN into the impurity states or band without any energy barrier, which means the acceptors are self-ionized.…”

Section: New Strategy Based On Band-engineeringmentioning

confidence: 99%

“…In many previous reports 31,32,35,39 the standard Hall model was used to analyze the carrier concentration and mobility in superlattice-like structures. However, it should be noted that a simple Hall measurement gives no thickness information, therefore can only determine sheet hall concentration.…”

Section: New Strategy Based On Band-engineeringmentioning

confidence: 99%

“…B. Gunning et al proposed another strategy to lower the acceptor impurity states by extremely high doping. 27 Recently, co-doping was regarded as another important strategy to address this issue, 19,[28][29][30] for example by Si-Mg co-doping and other mutually passivated defect pair co-doping. However, intensive theoretical analyses show that this type of energy level coupling is too small to significantly reduce the acceptor ionization energy due to different symmetries and wavefunction characteristics.…”

Section: Present Solution For P Doping Difficultiesmentioning

confidence: 99%

See 2 more Smart Citations

Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

Li¹,

Liu²,

Yi³

et al. 2017

III-Nitride Materials, Devices and Nano-Structures

View full text Add to dashboard Cite

Even though III-Nitrides have demonstrated their ample application in solid-state light, display, laser, detector and high-power RF/switching device, many other new breakthroughs on fundamental physics and fabrication techniques are still highly desired to lead to their next expansion of the research and application field in the near future. In this chapter, the general properties of III-nitrides as well as their ternary and quaternary were briefly reviewed. Specifically, we mainly focused on the underlying physics of p doping challenge, nitrides nano-structures and their application on LEDs. We presented an overview of some main results and progress in highly effective p doping for nitrides. Some promising strategies to address the issue of p doping challenge were also introduced. Furthermore, we describe the prevailing GaN nanowire fabrication methods including wet etching and selective area growth and their application in novel LED structures.

show abstract

Progress in External Quantum Efficiency for III‐Nitride Based Deep Ultraviolet Light‐Emitting Diodes

Chu

Tian

Zhang

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) are featured with small size, DC driving, no environmental contamination etc., and they are now emerging as the excellent solid-state light source to replace the conventional mercury based light tubes. Nevertheless, the DUV LEDs are currently affected by the poor external quantum efficiency (EQE), which is caused by the low internal quantum efficiency (IQE) and the very unsatisfying light extraction efficiency (LEE). In this work, the authors disclose the underlying mechanism for the low EQE and summarize the technologies that have been adopted so far for enhancing the EQE.

show abstract

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

Cited by 74 publications

References 33 publications

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

Progress in External Quantum Efficiency for III‐Nitride Based Deep Ultraviolet Light‐Emitting Diodes

Contact Info

Product

Resources

About