Negative-tone organic molecular resists

Advances in Patterning Materials and Processes XXXVI

et al. 2019

Irresistible Materials (IM) is developing novel resist systems based on the Multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. The Multi Trigger Resist is a non-metal based negative tone resist, and consists of a base molecule and a crosslinker, which represent the resist matrix, together with a photoacid generator (PAG). Previously presented MTR2 showed 16 nm half pitch lines patterned with a dose of 38 mJ/cm 2 , giving a LER of 3.7 nm on the NXE3300. Since then, research has been undertaken to improve this resist. In particular we are focusing on improved RLS; reduced top-loss and wiggling at high aspect ratios; eliminating the antimony PAG and further reduction of chemical stochastics. In this study, we present the approaches that have been taken to attain these goals and the initial results. Using the EUV Interference Lithography tool at PSI, a multi trigger resist with a high absorbance non-metal element included in the resist matrix, MTR2627, has been patterned at a pitch of 28nm with an estimated dose of 53mJ/cm 2 and LER of 4.2nm. The LWR is improved in the low dose region, and results also show that a thicker film can be used without pattern collapse below pitch 32nm due to increased stiffness. Using the Berkeley MET tool, this resist matrix with a higher MTR ratio has patterned 24nm lines at a pitch of 48nm with an LER of 1.9nm with a dose of 65mJ/cm 2 . Additionally, we present initial results for an MTR resist series where the antimony PAG has been replaced with a carbon based PAG.

Section: Methodsmentioning

confidence: 99%

Multi-trigger resist: novel synthesis improvements for high resolution EUV lithography

O'Callaghan

Advances in Patterning Materials and Processes XXXVI

et al. 2019

“…Triphenylsulfonium tosylate, which acts as a photo-decomposable quencher in epoxy based systems, was added where indicated [12].…”

Section: Methodsmentioning

confidence: 99%

Multi Trigger Resist for EUV Lithography

Vesters

J. Photopol. Sci. Technol.

et al. 2018

Self Cite

Irresistible Materials (IM) is developing novel resist systems based on the multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. The multi trigger resist (MTR) is a negative tone crosslinking resist that does not need a post exposure bake (PEB), In this study, we present the results that have been obtained using MTR resists by performing EUV exposures on the ASML NXE3300B EUV scanner at IMEC, and also at PSI and the MET tool at Berkeley. We present the lithography performance of the MTR2 resist series, which has been designed for lower line edge roughness. The MTR2 resist shows 16nm half pitch lines patterned with a dose of 38mJ/cm 2 , giving a LER of 3.7 nm on the NXE3300. Performance across various process conditions is discussed. We also present a new resist formulation using a crosslinker with a high opacity non-metallic atom attached, which has patterned 13nm lines at PSI and MET.

“…Triphenylsulfonium tosylate, which acts as a photo-decomposable quencher in epoxy based systems, was added where indicated. [5]…”

Section: Methodsmentioning

confidence: 99%

High-resolution EUV lithography using a multi-trigger resist

Kazazis

Extreme Ultraviolet (EUV) Lithography IX

et al. 2018

As minimum lithographic size continues to shrink, the development of techniques and resist materials capable of high resolution, high sensitivity and low line edge roughness (LER) have become increasingly important for next-generation lithography. In this study we present results where the behaviour of the resist is driven towards the multi-trigger regime by manipulating the resist formulation. We also present results obtained after enhancements of the base molecule to give high resolution, better LER, and a significant sensitivity enhancement of 40% over the standard material. Finally, we present the inclusion of non-metallic high-Z elements into the formulation to allow for a further reduction in LER at the same resolution and sensitivity as seen for the enhanced MTR molecule, indicating a direction for further improvements.