Abstract:Bulk GaAs grown under high oxygen potential shows an intermediate resistivity (ρ∼3×103 Ω cm at room temperature) with an electron activation energy E=0.42 eV. The relevant defect has been identified in literature as off-centered substitutional oxygen with three different charge states. Photoelectrical measurements on such GaAs material exhibit distinctly anomalous signals. Photoinduced current transient spectroscopy (PICTS) shows a signal with a negative sign, whereas thermally stimulated currents (TSCs) are c… Show more
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