Negative resists for electron-beam lithography utilizing acid-catalyzed intramolecular dehydration of phenylcarbinol

Abstract

Acid-catalyzed intramolecular dehydration of phenylcarbinol is used to design highly sensitive negative resists for electron beam lithography. Of the phenylcarbinol resists evaluated in this study, the resist composed of 1,3-bis(a-hydroxyisopropyl)benzene (Diol-1), m/p-cresol novolak resin, and diphenyliodonium triflate (DIT) shows the best lithographic performance in terms of sensitivity and resolution. Fine O.25-j.tm line-and-space patterns were formed by using the resist containing Diol-1 with a dose of 3.6 .tC/cm2 in conjunction with a 50 kV electron beam exposure system.

Negative EB Resist Materials Using Anisotropic Acid-Diffusion Based on Acid-Catalyzed Dehydration of Phenylcarbinols.

“…We developed negative deep-UV resists based on the polarity change reactions such as pinacol rearrangement, [6,7] phenylcarbinol etherification, [8] and phenylcarbinol dehydration, which have low activation energy compared to acidhardening reactions. [9][10][11] In the course of the development of the deep-UV resists, we found that the resist using phenylcarbinols dehydration exhibited high sensitivity, and small pattern-width dependence on PEB temperature. [ 10] Therefore, we expected that the resist using phenylcarbinols would exhibit a good lithographic performance in terms of sensitivity and CD control.…”

Negative Electron Beam Resists Using Ring-Chain Tautomerism of Benzoic Acid Derivatives

“…[4,5,6] In this article we describe a newly developed resist that uses the ring-chain tautomerism of oacetylbenzoic acid. The formulation, lithographic performance, and insolubilization mechanism of the new resist are discussed.…”