Investigations on monolayered transition
metal dichalcogenides (TMDs) and TMD heterostructures have been steadily
increasing over the past years due to their potential application
in a wide variety of fields such as microelectronics, sensors, batteries,
solar cells, and supercapacitors, among others. The present work focuses
on the characterization of TMDs using transmission electron microscopy,
which allows not only static atomic resolution but also investigations
into the dynamic behavior of atoms within such materials. Herein,
we present a body of recent research from the various techniques available
in the transmission electron microscope to structurally and analytically
characterize layered TMDs and briefly compare the advantages of TEM
with other characterization techniques. Whereas both static and dynamic
aspects are presented, special emphasis is given to studies on the
electron-driven in situ dynamic aspects of these
materials while under investigation in a transmission electron microscope.
The collection of the presented results points to a future prospect
where electron-driven nanomanipulation may be routinely used not only
in the understanding of fundamental properties of TMDs but also in
the electron beam engineering of nanocircuits and nanodevices.