Negative photoconductivity of InAs nanowires

Han, Yuxiang; Zheng, Xiaogang; Fu, Mengqi; Pan, Dong; Li, Xing; Guo, Yao; Zhao, Jianhua; Chen, Qing

doi:10.1039/c5cp06139c

Cited by 74 publications

(83 citation statements)

References 29 publications

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“…In addition, when the light was switched off, the current decreases a little at first because the photo-excited electrons and holes preferentially recombine as shown in Fig. 4, which is similar to the cases in InN thin film [32] and InAs nanowire [33]. To comprehend this phenomenon completely, the electronic band structure of the Au/h-WO 3 NW/Au device is shown in the Fig.…”

Section: Resultsmentioning

confidence: 60%

Positive and Negative Photoconductivity Conversion Induced by H2O Molecule Adsorption in WO3 Nanowire

Liu

Yin

et al. 2019

Nanoscale Res Lett

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Negative photoconductivity effect has been observed in the Au/WO 3 nanowire/Au devices in a high humidity environment, which might be attributed to the accumulation of H + ions on the surface of WO 3 nanowire. Under illumination with violet light (445 nm), the photo-excited holes can oxidize the adsorbed H 2 O molecules to produce H + ions and O 2 , while the photo-excited electrons at the conduction band bottom do not have enough energy to reduce H + ions. These H + ions will accumulate on the surface of the hexagonalWO 3 nanowire. They will capture mobile electrons and then reduce the concentration of carriers, which will result in a significant increase in the height of interface barrier and then a significant decrease in the conductance of the Au/h-WO 3 nanowire/Au device. By adjusting the relative humidity, light intensity, or bias voltage, the concentration and distribution of H + ions and then the conversion between positive and negative photoconductivity, as well as resistive switching properties, can be well regulated in this kind of devices.

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Section: Resultsmentioning

confidence: 60%

Positive and Negative Photoconductivity Conversion Induced by H2O Molecule Adsorption in WO3 Nanowire

Liu

Yin

et al. 2019

Nanoscale Res Lett

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“…With the increase of V g under the same illumination condition, R gradually decreases to −4 × 10 5 A W −1 at V g = +1 V. When the device is illuminated by NIR light, the photovoltaic effect induced by photoholes accumulated in the InGaAs channel may reduce the barrier between the source and the conducting channel, leading to a remarkable boost of the drive current from the source to the drain. Such a unique characteristic is beyond previously reported monopolar photoresponsivity, suggesting that the proposed device is actually a dual‐band photoelectron detector responsible in both visible and NIR wavelengths.…”

mentioning

confidence: 51%

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Deng

Bao

Zhu

et al. 2019

Advanced Optical Materials

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However, such a conventional technique is being challenged by the demand for system miniaturization. So far, several methods have been proposed to extend the response spectra of a single photodetector. One method involves heterogeneously integrating photodetectors based on materials with different bandgaps (such as Si and III−V compounds) on the same substrate by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) to introduce extra absorption layers. [7][8][9][10] Unfortunately, owing to lattice mismatches, significant leakage current frequently occurs in the dark, and the manufacturing is complicated and expensive. Another approach is to integrate a metasurface into a semiconductor by local plasmonic resonances. [11][12][13][14][15] However, such detectors suffer from extremely low quantum efficiency due to energy loss in the metallic metasurface.In recent years, 2D materials based on van der Waals heterojunctions have been extensively investigated as potential candidates for next-generation optoelectronic devices. [16][17][18] Different from conventional bulk semiconductors with covalent bonds, the lack of dangling bonds at the surface of 2D materials enables the realization of interfaces with fewer defects and lattice mismatches than conventional semiconductor devices, [19] offering us an excellent opportunity to integrate 2D materials with conventional At present, dual-channel or even multi-channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS 2 /InAlAs/InGaAs n-i-n heterojunction phototransistor by integrating multi-layered MoS 2 with InGaAs-based high electron mobility transistors (InGaAs-HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity (R) of over 8 × 10 5 A W -1 under near-infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS 2 /InAlAs/ InGaAs n-i-n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 10 5 A W -1 to -4 × 10 5 A W -1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS 2 /InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.The trend of photoelectric detection is advancing toward multiband detection, miniaturization, and high integration within one substrate. To accomplish multichannel detection to broadband electromagnetic radiation, independent photodetectors based on different semiconductors-such as GaN [1,2] for ultraviolet (UV), Si [3,4] for visible, and InGaAs [5,6] for near-infrared (NIR) band...

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“…Though photogate effect usually leads to additional photoconductive gains in photodetectors, it in some cases also causes negative photoresponses. In InAs nanwires, such negative photoresponse has been genearlly observed, in which the free carriers in nanowire tend to be depleted upon illumination by the photogate effects . Taking advantage of such characteristic, Fang et al recently reported an activation of MWIR response in single InAs nanowire based photodetector.…”

Section: Nanostructured Infrared Sensitive Materials For Photodetectorsmentioning

confidence: 99%

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

Zhuge

Zheng

Luo

et al. 2017

Adv Materials Technologies

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Infrared photodetectors are finding widespread applications in telecommunication, motion detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The nanostructured materials and architectures are attracting extensive interests in photodetectors in view of the potential benefits from confined light‐matter interaction, fast carrier dynamics and ultrahigh photoconductive gains. This review concentrates on the photodetection in the infrared spectrum and recent progresses in constructing advanced infrared photodetectors based on quantum wells, dots, and the rapidly evolving 1D and 2D materials are summarized. The recent achievements in exploring nanostructured plasmonic metamaterials for the intriguing subwavelength photon confinement and waveguides in devices are also surveyed considering their importance in device integration. An outlook of infrared photodetection is given in the end as a guideline for this vigorous field.

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Negative photoconductivity of InAs nanowires

Cited by 74 publications

References 29 publications

Positive and Negative Photoconductivity Conversion Induced by H2O Molecule Adsorption in WO3 Nanowire

Positive and Negative Photoconductivity Conversion Induced by H2O Molecule Adsorption in WO3 Nanowire

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

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Negative photoconductivity of InAs nanowires

Cited by 74 publications

References 29 publications

Positive and Negative Photoconductivity Conversion Induced by H2O Molecule Adsorption in WO3 Nanowire

Positive and Negative Photoconductivity Conversion Induced by H2O Molecule Adsorption in WO3 Nanowire

Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

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Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands