Negative Magnetoresistance in p‐CdSb

Andronik, I. K.; Arushanov, E.; Emelyanenko, O. V.; Nasledov, D. N.

doi:10.1002/pssb.19680270103

Cited by 10 publications

(12 citation statements)

References 3 publications

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“…As mentioned above, C i j and S i j should not depend on the direction of j with respect to the crystallographic axes. From equations (10) and (11), where the subscript i refers also to the direction of j, it can be seen that for N i N c (i = 1, 2) S 13 /S 23 should be equal to (C 13 /C 23 ) 1/2 , which is not fulfilled for our samples. Below we will show that this is connected not to the sensitivity of the corresponding coefficients to the direction of the current (contradicting the theory [15]), but to a relative proximity of the acceptor system in both samples to the MIT, where the ratios of N i /N c are not negligible and N 1 = N 2 .…”

Section: Analysis Of the Experimental Data And Discussionmentioning

confidence: 91%

“…According to equations ( 8) and (10) the plots of ln ρ versus B 2 in weak magnetic fields should be linear functions with the slopes independent of T . As follows from figure 3, such behaviour is realized in no.…”

Section: Analysis Of the Experimental Data And Discussionmentioning

confidence: 99%

“…Doping of CdSb with Ag induces a metal-insulator transition (MIT) removing the energy difference between the shallow acceptor impurity states and the valence band. This leads to the appearance of a degenerate hole gas, transforming the nature of the low-temperature conductivity from activated to metallic [2,10]. This allows observation of the Shubnikov-de Haas effect in p-CdSb, yielding accurate values of the effective mass of the carriers.…”

Section: Introductionmentioning

confidence: 99%

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Observation of the anisotropic hopping conductivity of p-CdSb in a magnetic field

Laiho¹,

Lashkul²,

Лисунов³

et al. 2004

J. Phys.: Condens. Matter

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The resistivity of the anisotropic semiconductor p-CdSb is investigated in a wide temperature range of T = 1.9-300 K in pulsed magnetic fields up to B = 25 T. Two not intentionally doped single-crystalline samples oriented along the crystallographic axes [100] (no. 1) and [010] (no. 2) are used for measurements of the resistivity, ρ, in transversal magnetic field configuration. Below T ≈ 8 K the resistivity follows the laws ln ρ ∼ C B 2 for B < B c and ln ρ ∼ S B 7/12 for B > B c , where the coefficients C and S do not depend on T , and B c ≈ 5-7.5 T. These are characteristics of nearest-neighbour hopping conductivity. The coefficients C and S depend on the direction of B, and their ratios agree completely with the values calculated with the components of the hole effective mass. The acceptor concentrations, N 1 ≈ 4.3 × 10 16 cm −3 and N 2 ≈ 7.6 × 10 16 cm −3 for no. 1 and no. 2, respectively, are relatively close to the critical value of the metal-insulator transition (MIT), N c ≈ 1.2×10 17 cm −3 . This leads to enhancement of the mean localization radii, a * 1 ≈ 78 Å in no. 1 and a * 2 ≈ 126 Å in no. 2, with respect to the value of a * 0 ≈ 50 Å far from the MIT determined by an asymptote of the wavefunction at a large distance from the impurity centre.

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Section: Analysis Of the Experimental Data And Discussionmentioning

confidence: 91%

Section: Analysis Of the Experimental Data And Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Observation of the anisotropic hopping conductivity of p-CdSb in a magnetic field

Laiho¹,

Lashkul²,

Лисунов³

et al. 2004

J. Phys.: Condens. Matter

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“…Lower panel: dependence of B(j ) c on T/T b (0) for different directions of the magnetic field. The solid lines are calculated with equation(5) and n = 2/3 as described in the text, the dotted lines are to guide the eye.…”

mentioning

confidence: 99%

The influence of Ni-rich nanoclusters on the anisotropic magnetic properties of CdSb doped with Ni

Laiho

Lashkul

Лисунов

et al. 2006

Semicond. Sci. Technol.

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The magnetic properties of oriented CdSb single crystals doped with 2 at% of Ni are investigated. From measurements of magnetic irreversibility defined by deviation of the zero-field-cooled (ZFC) susceptibility from the field-cooled (FC) susceptibility, the value of the mean anisotropy field B K ∼ 4 kG is obtained. The ZFC susceptibility displays a broad maximum at a blocking temperature, T b , depending on B according to the law [T b (B)/T b (0)] 1/2 = 1 − B/B K with T b (0) ∼ 100 K. The field dependence of the magnetization exhibits saturation above ∼20-30 kG with values of M s different for B along the [1 0 0], [0 1 0] and [0 0 1] axes. The temperature dependence of M s is weak, increasing slightly upon cooling the sample below ∼100 K. The temperature dependence of the coercive field, B c (T), is weak above T b but is enhanced strongly with decreasing temperature below T b. The anisotropy of B c is inverted with respect to the anisotropy of M s. Such behaviour can be attributed to spheroidal Ni-rich Ni 1−x Sb x nanoparticles with a high aspect ratio, broad size distribution and distribution of the orientation of the major axis around a preferred direction. The relation B c B K and the anisotropies of M s and B c are consistent with reversal of the magnetization by the curling mode, whereas the T b (B) dependence is typical of the coherent rotation mode. This difference is connected to the proximity of the average transversal cluster radius to a critical value for transition between the two magnetization reversal modes within a wide crossover interval, due to broad distribution of the cluster sizes.

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“…Single crystals of cadmium selenide prepared by vacuum sublimation were used as the source. The CdSe laycrs were deposited on freshly cleaved (110) surfaces of ZnTe crystals prepared in our laboratory [6]. The hole concentration in ZnTe was 1 to 6 x 10l6 cm-b and the Hall mobility was about 100 cm2/Vs at room temperature.…”

Section: Preparation Of Heterojunctionsmentioning

confidence: 99%

ZnTe-CdSe Heterojunctions I. Electrical Properties

Gashin¹,

Симашкевич²

1973

Phys. Stat. Sol. (a)

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ZnTe-CdSe heterojunctions were obtained by gas-transport epitaxy of cadmium selenide on zincum telluride single crystalline substrates. Structural investigations showed that CdSe single crystalline films of cubic modification have been obtained at substrate temperatures more than 450 "C. Current-voltage and capacitance-voltage characteristics were studied. At forward voltages less than the diffusion potential, equal to 1.2 V, the current depends exponentially on the voltage. The soft breakdown observed at reverse bias is caused by tunneling. The results of the structural and electrical investigations indicated a sharp interface between the materials forming the heterojunction. The interface states do not appreciably influence the heterojunction properties. Anderson's model was used for the calculation of the heterojunction parameters and the construction of the band diagram.reTeponepexogbI ZnTe-CdSe 6b1n~ nonyseHbI ~~~O T~~H C I I O~T H O $ I a n~~a~c~e l cejleImAa I

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Negative Magnetoresistance in p‐CdSb

Cited by 10 publications

References 3 publications

Observation of the anisotropic hopping conductivity of p-CdSb in a magnetic field

Observation of the anisotropic hopping conductivity of p-CdSb in a magnetic field

The influence of Ni-rich nanoclusters on the anisotropic magnetic properties of CdSb doped with Ni

ZnTe-CdSe Heterojunctions I. Electrical Properties

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