ZnTe-CdSe Heterojunctions I. Electrical Properties

Abstract

ZnTe-CdSe heterojunctions were obtained by gas-transport epitaxy of cadmium selenide on zincum telluride single crystalline substrates. Structural investigations showed that CdSe single crystalline films of cubic modification have been obtained at substrate temperatures more than 450 "C. Current-voltage and capacitance-voltage characteristics were studied. At forward voltages less than the diffusion potential, equal to 1.2 V, the current depends exponentially on the voltage. The soft breakdown observed at reverse bias is caused by tunneling. The results of the structural and electrical investigations indicated a sharp interface between the materials forming the heterojunction. The interface states do not appreciably influence the heterojunction properties. Anderson's model was used for the calculation of the heterojunction parameters and the construction of the band diagram.reTeponepexogbI ZnTe-CdSe 6b1n~ nonyseHbI ~~~O T~~H C I I O~T H O $ I a n~~a~c~e l cejleImAa I<anMm Iia MoHoIEp~cTajIJl~~eciC~e n o~n o x w~ 113 Temypana umma. CTpyKTypHLIe mccnejqoBaHm I I O K~~~J I H , w o npn TeMnepaTypax IIOAJIONKH 6onhrue 9eM 450 "c IIOJIy%iIoTCR MOHOKpHCTaJIJIHqeCKHe CJIOH CdSe. BbIJIH HCCJIeAOBaHbI BOJlbTaMIlepHbIe H BOJlbTeMKOCTHbIe XapaKTepHCTHKH HaHHbIX reTepOIIepeXOnOl3. npll IIpcIMbIX CMeUeHHHX MeHbUIIIX, 9eM BeJIHgHHa AH@@Y3HOHHOrO IIOTeHuHaJIa, PaBHOrO 1,2 B , Ha6JlIoAaeTCH 3KCIIOHeHuHaJIbHaH 3aBUCmMOCTb TOKa OT HaIIpRlrce-HHH. Ha6~11o~ae~b18 Ha 06paTHO CMeUeHHbIX IIepeXOAaX MnlWHG np0608 O6yCJIOB-JIeH TyHHeJIMpOBaHUeM. Pe3yJIbTaTbI CTPYKTYPHbIX H 3JIeKTPHqeCKEIX HCCJIeAO-BaHmE y1ca3ma1o~ Ha Haanwe pe3xoG rpaHHub1 paanena Memgy MaTepmanaMu, O~~~~~I O U I E I M E I reTeponepexoH. HosepxHocTHbIe COCTORHUR Ha rpamue paanena pacseTa napaMeTpoB H IIOCTpOeHHH ~O H H O~~ cxeMbI reTeponepexona 6bma mx0.m-He OKa3bIBaMT Cy~eCTBeHHOrO BJIHHHHH Ha CBO8CTBa reTepOIIepeXOAa. AJIR 30BaHa MOAenb AHAepcoHa.