Negative-donor centers in semiconductors and quantum wells

Pang, Tao; Louie, Steven G.

doi:10.1103/physrevlett.65.1635

Cited by 149 publications

(103 citation statements)

References 12 publications

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“…trapped by an attractive impurity in the GaAs quantum well [17]. Our evaluations show that in spite of applying strong electric fields, which, in general, are expected to destabilize a system, one can observe generation of long-living states with lifetimes comparable to or even larger than typical timescales encountered in semiconductor heterostructures.…”

Section: Resonance States In External Fieldsmentioning

confidence: 77%

Generation and control of resonance states in crossed magnetic and electric fields

Krajewska

Kamiński

2002

Physics Letters A

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A two-dimensional electron system interacting with an impurity and placed in crossed magnetic and electric fields is under investigation. Since it is assumed that an impurity center interacts as an attractive δ-like potential a renormalization procedure for the retarded Green's function has to be carried out. For the vanishing electric field we obtain a close analytical expression for the Green's function and we find one bound state localized between Landau levels. It is also shown by numerical investigations that switching on the electric field new long-living resonance states localized in the vicinity of Landau levels can be generated.

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Section: Resonance States In External Fieldsmentioning

confidence: 77%

Generation and control of resonance states in crossed magnetic and electric fields

Krajewska

Kamiński

2002

Physics Letters A

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“…The binding energies presented in these figures should be compared with the corresponding values of the binding energies of the D − in 3D bulk, 0.055Ry* [7], in 2D bulk, 0.511Ry* [9], respectively. As the QD radius is very large the structures can be considered as quasi-two dimensional systems with a strong but incomplete confinement in z-direction due to the finite values of the thickness and the barrier height.…”

Section: Resultsmentioning

confidence: 99%

Negatively charged donors in flat quantum dots

García¹,

Marín²,

Mikhailov³

2006

Braz. J. Phys.

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The ground state energies of off-axis negatively charged donors in axially symmetrical quantum dots, with different shapes but in all cases with a small height-to-base radius aspect ratio are calculated in adiabatic approximation by using the Hylleraas-type trial function. The dependencies of the neutral and negative donor binding energies and their ratios on the base radius in the pyramid, lens and disk are calculated and compared with previously obtained results for the spherical quantum dot. We also present the contour plots of the binding energies of the neutral and negative donors with different positions along a vertical cross section in the middle of the quantum dots.

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“…lb), two triplet transitions have been predicted by Dzyubenko and Sivachenko [4]. One of these, T -, lies slightly below CR (its parent is the D° 2p--2s transition, Fig.…”

Section: The T--triplet Transitionmentioning

confidence: 99%

“…This is followed by a discussion of investigations of a series of GaAs/A1 0.3Ga0 .7As multiple-quantum-well (MQW) samples with Si donors 6-doped both in the well-centers and in the wide barrier-centers which, in concert with a theoretical model, reveal interesting many-electron and localization effects [4]. Finally, some recent experiments which employ high pressures to tune the electron density in individual samples are described.…”

Section: Introductionmentioning

confidence: 99%

“…Experimental and theoretical efforts over the past eight to nine years have focused on identification of stable negative donor ions (D -) in quantum-well structures [2] and on understanding the various two-electron energy states in high magnetic fields [3,4]. Since the correct identification of the D --singlet transition via far infrared (FIR) magnetospectroscopy [2], additional studies have verified and extended these results [3], and the nature of the singlet states and their field-and well-width dependencies are well understood for on-well-center D -ions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Spectroscopy of Charged Donors and Many-Electron Effects in Semiconductor Quantum Wells

et al. 1999

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Far infrared magnetospectroscopic studies of negative donor ions (D -), and donors in the presence of many excess electrons in high magnetic fields in GaAs/AlGaAs quantum wells are reviewed. Both singlet and triplet transitions of well-center D --ions were observed and are in good agreement with recent theoretical calculations. For off-well-center D --ions evidence for a predicted magnetic-field-induced "unbinding" of the second electron was found. In the presence of many excess electrons the D --singlet and -triplet transitions are blue-shifted substantially and evolve into bound magnetoplasmon excitations. Cusps are observed at integral and fractional Landau-level filling factors (v) in a plot of normalized blue-shift of the D --singlet-like bound magnetoplasmon transition vs. v. For v < 1, the singlet-like bound magnetoplasmon transition continuously approaches the isolated D --singlet transition with increasing magnetic field, while the triplet-like transition loses strength, irrespective of the electron density. Exact diagonalization studies of a donor ion with a few electrons in a parabolic lateral confining potential show the importance of electron-electron interactions and localization due to the long-range fluctuating potential in explaining this behavior. High pressure studies in a specially designed diamond anvil cell exhibit a continuous evolution from bound magnetoplasmon transitions to isolated D --transitions to neutral donor transitions in a single sample as the pressure is increased and the electron density in the wells is decreased.

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Negative-donor centers in semiconductors and quantum wells

Cited by 149 publications

References 12 publications

Generation and control of resonance states in crossed magnetic and electric fields

Generation and control of resonance states in crossed magnetic and electric fields

Negatively charged donors in flat quantum dots

Spectroscopy of Charged Donors and Many-Electron Effects in Semiconductor Quantum Wells

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